Danilo Bürger

TL;DR: In this article, a model of flexible top and bottom Schottky-like barrier heights in the BFTO/BFO bilayer structures is presented, where the resistive switching at both positive and negative bias make it possible to use both polarities of reading bias to simultaneously program and store all 16 Boolean logic functions into a single cell of a single-cell of a bilayer structure in three logic cycles.

TL;DR: In this paper, a nonvolatile bipolar resistive switching has been observed in an Au/BiFeO3/Pt structure, where a Schottky contact and a quasi-Ohmic contact were formed at the AU/BiO3 and BiO3-Pt interfaces, respectively.

TL;DR: In this article, nonvolatile bipolar resistive switching has been observed in an Au/BiFeO3/Pt structure, where a Schottky contact and a quasi-Ohmic contact were formed at the Au/BioO3 and BiFeO 3/Pte interfaces, respectively.

TL;DR: A model on modifiable Schottky barrier heights is developed and the physical origin underlying resistive switching in BiFeO3 memristors containing mobile oxygen vacancies is elucidated.

TL;DR: This paper investigates spike-timing dependent plasticity (STDP) with a single pairing of one presynaptic voltage spike and one post-synaptic Voltage spike in a BiFeO3 memristive device and shows methods to reduce the consumed energy per setting pulse to only 4.5 pJ in the developed artificial synapses.