Showing papers in "arXiv: Materials Science in 2011"

Thermal Properties of Graphene, Carbon Nanotubes and Nanostructured Carbon Materials

Abstract: Recent years witnessed a rapid growth of interest of scientific and engineering communities to thermal properties of materials. Carbon allotropes and derivatives occupy a unique place in terms of their ability to conduct heat. The room-temperature thermal conductivity of carbon materials span an extraordinary large range – of over five orders of magnitude – from the lowest in amorphous carbons to the highest in graphene and carbon nanotubes. I review thermal and thermoelectric properties of carbon materials focusing on recent results for graphene, carbon nanotubes and nanostructured carbon materials with different degrees of disorder. A special attention is given to the unusual size dependence of heat conduction in two-dimensional crystals and, specifically, in graphene. I also describe prospects of applications of graphene and carbon materials for thermal management of electronics.

Quantifying defects in graphene via Raman spectroscopy at different excitation energies

Abstract: We present a Raman study of Ar(+)-bombarded graphene samples with increasing ion doses. This allows us to have a controlled, increasing, amount of defects. We find that the ratio between the D and G peak intensities for a given defect density strongly depends on the laser excitation energy. We quantify this effect and present a simple equation for the determination of the point defect density in graphene via Raman spectroscopy for any visible excitation energy. We note that, for all excitations, the D to G intensity ratio reaches a maximum for an inter-defect distance ~3nm. Thus, a given ratio could correspond to two different defect densities, above or below the maximum. The analysis of the G peak width and its dispersion with excitation energy solves this ambiguity.

Large Area Vapor Phase Growth and Characterization of MoS2 Atomic Layers on SiO2 Substrate

Abstract: Monolayer Molybdenum disulfide (MoS2), a two-dimensional crystal with a direct bandgap, is a promising candidate for 2D nanoelectronic devices complementing graphene. There have been recent attempts to produce MoS2 layers via chemical and mechanical exfoliation of bulk material. Here we demonstrate the large area growth of MoS2 atomic layers on SiO2 substrates by a scalable chemical vapor deposition (CVD) method. The as-prepared samples can either be readily utilized for further device fabrication or be easily released from SiO2 and transferred to arbitrary substrates. High resolution transmission electron microscopy and Raman spectroscopy on the as grown films of MoS2 indicate that the number of layers range from single layer to a few layers. Our results on the direct growth of MoS2 layers on dielectric leading to facile device fabrication possibilities show the expanding set of useful 2D atomic layers, on the heels of graphene, which can be controllably synthesized and manipulated for many applications.

Ferromagnetism in semiconductors and oxides: prospects from a ten years' perspective

Abstract: Over the last decade the search for compounds combining the resources of semiconductors and ferromagnets has evolved into an important field of materials science. This endeavour has been fuelled by continual demonstrations of remarkable low-temperature functionalities found for ferromagnetic structures of (Ga,Mn)As, p-(Cd,Mn)Te, and related compounds as well as by ample observations of ferromagnetic signatures at high temperatures in a number of non-metallic systems. In this paper, recent experimental and theoretical developments are reviewed emphasising that, from the one hand, they disentangle many controversies and puzzles accumulated over the last decade and, on the other, offer new research prospects.

STM Spectroscopy of ultra-flat graphene on hexagonal boron nitride

Abstract: Graphene has demonstrated great promise for future electronics technology as well as fundamental physics applications because of its linear energy-momentum dispersion relations which cross at the Dirac point[1, 2]. However, accessing the physics of the low density region at the Dirac point has been difficult because of the presence of disorder which leaves the graphene with local microscopic electron and hole puddles[3–5], resulting in a finite density of carriers even at the charge neutrality point. Efforts have been made to reduce the disorder by suspending graphene, leading to fabrication challenges and delicate devices which make local spectroscopic measurements difficult[6, 7]. Recently, it has been shown that placing graphene on hexagonal boron nitride (hBN) yields improved device performance[8]. In this letter, we use scanning tunneling microscopy to show that

Ink-Jet Printed Graphene Electronics

Abstract: We demonstrate ink-jet printing as a viable method for large area fabrication of graphene devices. We produce a graphene-based ink by liquid phase exfoliation of graphite in N-Methylpyrrolidone. We use it to print thin-film transistors, with mobilities up to~95cm^2V^(-1)s(-1), as well as transparent and conductive patterns, with~80 % transmittance and~30kOhm/sq sheet resistance. This paves the way to all-printed, flexible and transparent graphene devices on arbitrary substrates

The building blocks of magnonics

Abstract: Novel material properties can be realized by designing waves' dispersion relations in artificial crystals. The crystal's structural length scales may range from nano- (light) up to centimeters (sound waves). Because of their emergent properties these materials are called metamaterials. Different to photonics, where the dielectric constant dominantly determines the index of refraction, in a ferromagnet the spin-wave index of refraction can be dramatically changed already by the magnetization direction. This allows a different flexibility in realizing dynamic wave guides or spin-wave switches. The present review will give an introduction into the novel functionalities of spin-wave devices, concepts for spin-wave based computing and magnonic crystals. The parameters of the magnetic metamaterials are adjusted to the spin-wave k-vector such that the magnonic band structure is designed. However, already the elementary building block of an antidot lattice, the singular hole, owns a strongly varying internal potential determined by its magnetic dipole field and a localization of spin-wave modes. Photo-magnonics reveal a way to investigate the control over the interplay between localization and delocalization of the spin-wave modes using femtosecond lasers, which is a major focus of this review. We will discuss the crucial parameters to realize free Bloch states and how, by contrast, a controlled localization might allow to gradually turn on and manipulate spin-wave interactions in spin-wave based devices in the future.

Lithium Diffusion in Graphitic Carbon

Abstract: Graphitic carbon is currently considered the state-of-the-art material for the negative electrode in lithium-ion cells, mainly due to its high reversibility and low operating potential. However, carbon anodes exhibit mediocre charge/discharge rate performance, which contributes to severe transport-induced surface-structural damage upon prolonged cycling, and limits the lifetime of the cell. Lithium bulk diffusion in graphitic carbon is not yet completely understood, partly due to the complexity of measuring bulk transport properties in finite-sized, non-isotropic particles. To solve this problem for graphite, we use the Devanathan-Stachurski electrochemical methodology combined with ab-initio computations to deconvolute, and quantify the mechanism of lithium-ion diffusion in highly oriented pyrolytic graphite (HOPG). The results reveal inherent high lithium-ion diffusivity in the direction parallel to the graphene plane (ca. 10^-7 - 10^-6 cm2 s-1), as compared to sluggish lithium-ion transport along grain boundaries (ca. 10^-11 cm^2 s^-1), indicating the possibility of rational design of carbonaceous materials and composite electrodes with very high rate capability.

Plasmon Enhanced Solar-to-Fuel Energy Conversion

Abstract: Future generations of photoelectrodes for solar fuel generation must employ inexpensive, earth-abundant absorber materials in order to provide a large-scale source of clean energy. These materials tend to have poor electrical transport properties and exhibit carrier diffusion lengths which are significantly shorter than the absorption depth of light. As a result, many photo-excited carriers are generated too far from a reactive surface, and recombine instead of participating in solar-to-fuel-conversion. We demonstrate that plasmonic resonances in metallic nanostructures and multi-layer interference effects can be engineered to strongly concentrate sunlight close to the electrode/liquid interface, precisely where the relevant reactions take place. By comparing spectral features in the enhanced photocurrent spectra to full-field electromagnetic simulations, the contribution of surface plasmon excitations is verified. These results open the door to the optimization of a wide variety of photochemical processes by leveraging the rapid advances in the field of plasmonics.

High-Precision Tuning of State for Memristive Devices by Adaptable Variation-Tolerant Algorithm

Abstract: Using memristive properties common for the titanium dioxide thin film devices, we designed a simple write algorithm to tune device conductance at a specific bias point to 1% relative accuracy (which is roughly equivalent to 7-bit precision) within its dynamic range even in the presence of large variations in switching behavior. The high precision state is nonvolatile and the results are likely to be sustained for nanoscale memristive devices because of the inherent filamentary nature of the resistive switching. The proposed functionality of memristive devices is especially attractive for analog computing with low precision data. As one representative example we demonstrate hybrid circuitry consisting of CMOS summing amplifier and two memristive devices to perform analog multiply and accumulate computation, which is a typical bottleneck operation in information processing.

New route for stabilization of 1T-WS2 and MoS2 phases

Abstract: The phenomenon of a partial 2H\rightarrow1T phase transition within multiwalled WS2 nanotubes under substitutional Rhenium doping is discovered by means of high-resolution transmission electron microscopy. Using density-functional calculations for the related MoS2 compound we consider a possible origin of this phase transition, which was known formerly only for WS2 and MoS2 intercalated by alkali metals. An interplay between the stability of layered or nanotubular forms of 2H and 1T allotropes is found to be intimately related with their electronic structures and electro-donating ability of an impurity.

MoS2 Nanoparticles Grown on Graphene: An Advanced Catalyst for Hydrogen Evolution Reaction

Abstract: Advanced materials for electrocatalytic and photoelectrochemical water splitting are central to the area of renewable energy. Here, we developed a solvothermal synthesis of MoS2 nanoparticles selectively on reduced graphene oxide (RGO) sheets suspended in solution. The resulting MoS2/RGO hybrid material possessed nanoscopic few-layer MoS2 structures with abundant exposed edges stacked onto graphene, in strong contrast to large aggregated MoS2 particles grown freely in solution without GO. The MoS2/RGO hybrid exhibited superior electrocatalytic activity in the hydrogen evolution reaction (HER) to other MoS2 catalysts. A Tafel slope of ~ 41 mV/decade was measured for MoS2 catalysts in HER for the first time, far exceeding the activity of previous MoS2 owing to the abundant catalytic edge sites of MoS2 nanoparticles and excellent electrical coupling to the underlying graphene network. The ~ 41 mV/decade Tafel slope suggested the Volmer-Heyrovsky mechanism for MoS2 catalyzed HER, with electrochemical desorption of hydrogen as the rate-limiting step.

Advanced Asymmetrical Supercapacitors Based on Graphene Hybrid Materials

Abstract: Supercapacitors operating in aqueous solutions are low cost energy storage devices with high cycling stability and fast charging and discharging capabilities, but have suffered from low energy densities. Here, we grow Ni(OH)2 nanoplates and RuO2 nanoparticles on high quality graphene sheets to maximize the specific capacitances of these materials. We then pair up a Ni(OH)2/graphene electrode with a RuO2/graphene electrode to afford a high performance asymmetrical supercapacitor with high energy and power densities operating in aqueous solutions at a voltage of ~1.5V. The asymmetrical supercapacitor exhibits significantly higher energy densities than symmetrical RuO2-RuO2 supercapacitors and asymmetrical supercapacitors based on either RuO2-carbon or Ni(OH)2-carbon electrode pairs. A high energy density of ~48Wh/kg at a power density of ~0.23kW/kg, and a high power density of ~21kW/kg at an energy density of ~14Wh/kg have been achieved with our Ni(OH)2/graphene and RuO2/graphene asymmetrical supercapacitor. Thus, pairing up metal-oxide/graphene and metal-hydroxide/graphene hybrid materials for asymmetrical supercapacitors represents a new approach to high performance energy storage.

Suppression of Phase Separation in LiFePO4 Nanoparticles During Battery Discharge

Abstract: Using a novel electrochemical phase-field model, we question the common belief that LixFePO4 nanoparticles separate into Li-rich and Li-poor phases during battery discharge. For small currents, spinodal decomposition or nucleation leads to moving phase boundaries. Above a critical current density (in the Tafel regime), the spinodal disappears, and particles fill homogeneously, which may explain the superior rate capability and long cycle life of nano-LiFePO4 cathodes.

Low Effective Mass Leading to High Thermoelectric Performance

Abstract: High Seebeck coefficient by creating large density of state (DOS) around the Fermi level through either electronic structure modification or manipulating nanostructures, is commonly considered as a route to advanced thermoelectrics. However, large density of state due to flat bands leads to large effective mass, which results in a simultaneous decrease of mobility. In fact, the net effect of high effective mass is a lower thermoelectric figure of merit when the carriers are predominantly scattered by acoustic phonons according to the deformation potential theory of Bardeen-Shockley. We demonstrate the beneficial effect of light effective mass leading to high power factor in n-type thermoelectric PbTe, where doping and temperature can be used to tune the effective mass. This clear demonstration of the deformation potential theory to thermoelectrics shows that the guiding principle for band structure engineering should be low effective mass along the transport direction.

MoS2 Dual-Gate MOSFET with Atomic-Layer-Deposited Al2O3 as Top-Gate Dielectric

Abstract: We demonstrate atomic-layer-deposited (ALD) high-k dielectric integration on two-dimensional (2D) layer-structured molybdenum disulfide (MoS2) crystals and MoS2 dual-gate n-channel MOSFETs with ALD Al2O3 as top-gate dielectric. Our C-V study of MOSFET structures shows good interface between 2D MoS2 crystal and ALD Al2O3. Maximum drain currents using back-gates and top-gates are measured to be 7.07mA/mm and 6.42mA/mm at Vds=2V with a channel width of 3 {\mu}m, a channel length of 9 {\mu}m, and a top-gate length of 3 {\mu}m. We achieve the highest field-effect mobility of electrons using back-gate control to be 517 cm^2/Vs. The highest current on/off ratio is over 10^8.

Rapid Surface Oxidation as a Source of Surface Degradation Factor for Bi2Se3

Abstract: Bi2Se3 is a topological insulator with metallic surface states residing in a large bulk bandgap. It is believed that Bi2Se3 gets additional n-type doping after exposure to atmosphere, thereby reducing the relative contribution of surface states in total conductivity. In this letter, transport measurements on Bi2Se3 nanoribbons provide additional evidence of such environmental doping process. Systematic surface composition analyses by X-ray photoelectron spectroscopy reveal fast formation and continuous growth of native oxide on Bi2Se3 under ambient conditions. In addition to n-type doping at the surface, such surface oxidation is likely the material origin of the degradation of topological surface states. Appropriate surface passivation or encapsulation may be required to probe topological surface states of Bi2Se3 by transport measurements.

First-Principles Thermodynamics of Graphene Growth on Cu Surface

Abstract: Chemical vapor deposition (CVD) is an important method to synthesis grapheme on a substract. Recently, Cu becomes the most popular CVD substrate for graphene growth. Here, we combine electronic structure calculation, molecular dynamics simulation, and thermodynamics analysis to study the graphene growth process on Cu surface. As a fundamentally important but previously overlooked fact, we find that carbon atoms are thermodynamically unfavorable on Cu surface under typical experimental conditions. The active species for graphene growth should thus mainly be CHx instead of atomic carbon. Based on this new picture, the nucleation behavior can be understood, which explains many experimental observations and also provides us a guide to improve graphene sample quality.

A Magnetically-Triggered Composite Membrane for On-Demand Drug Delivery

Abstract: Nanocomposite membranes based on thermosensitive, poly(N-isopropylacrylamide)-based nanogels and magnetite nanoparticles have been designed to achieve "on-demand" drug delivery upon the application of an oscillating magnetic field. On-off release of sodium fluorescein over multiple magnetic cycles has been successfully demonstrated using prototype membrane-based devices. The total drug dose delivered was directly proportional to the duration of the "on" pulse. The membranes were non-cytotoxic, biocompatible, and retained their switchable flux properties after 45 days of subcutaneous implantation.

Coherency strain and the kinetics of phase separation in LiFePO4

Abstract: A theoretical investigation of the effects of elastic coherency on the thermodynamics, kinetics, and morphology of intercalation in single LiFePO4 nanoparticles yields new insights into this important battery material Anisotropic elastic stiffness and misfit strains lead to the unexpected prediction that low-energy phase boundaries occur along {101} planes, while conflicting reports of phase boundary orientations are resolved by a partial loss of coherency in the {100} direction Elastic relaxation near surfaces leads to the formation of a striped morphology, whose characteristic length scale is predicted by the model and yields an estimate of the interfacial energy The effects of coherency strain on solubility and galvanostatic discharge are studied with a reaction-limited phase-field model, which quantitatively captures the influence of misfit strain, particle size, and temperature on solubility seen in experiments Coherency strain strongly suppresses phase separation during discharge, which enhances rate capability and extends cycle life The effects of elevated temperature and the feasibility of nucleation are considered in the context of multi-particle cathodes

Graphene Nucleation on Transition Metal Surface: Structure Transformation and Role of the Metal Step Edge

Abstract: The nucleation of graphene on a transition metal (TM) surface, either on a terrace or near a step edge, is systematically explored using density functional theory (DFT) calculations and applying the two-dimensional (2D) crystal nucleation theory. Careful optimization of the supported carbon clusters, CN (with size N ranging from 1 to 24), on the Ni(111) surface indicates a ground state structure transformation from a one-dimensional (1D) C chain to a two-dimensional (2D) sp2 C network at N ~ 10-12. Furthermore, the crucial parameters controlling graphene growth on the metal surface, nucleation barrier, nucleus size, and the nucleation rate on a terrace or near a step edge, are calculated. In agreement with numerous experimental observations, our analysis shows that graphene nucleation near a metal step edge is superior to that on a terrace. Based on our analysis, we propose the use of seeded graphene to synthesize high-quality graphene in large area.

Graphite and Hexagonal Boron-Nitride Possess the Same Interlayer Distance. Why?

Abstract: Graphite and hexagonal boron nitride (h-BN) are two prominent members of the family of layered materials possessing a hexagonal lattice. While graphite has non-polar homo-nuclear C-C intra-layer bonds, h-BN presents highly polar B-N bonds resulting in different optimal stacking modes of the two materials in bulk form. Furthermore, the static polarizabilities of the constituent atoms considerably differ from each other suggesting large differences in the dispersive component of the interlayer bonding. Despite these major differences both materials present practically identical interlayer distances. To understand this finding, a comparative study of the nature of the interlayer bonding in both materials is presented. A full lattice sum of the interactions between the partially charged atomic centers in h-BN results in vanishingly small monopolar electrostatic contributions to the interlayer binding energy. Higher order electrostatic multipoles, exchange, and short-range correlation contributions are found to be very similar in both materials and to almost completely cancel out by the Pauli repulsions at physically relevant interlayer distances resulting in a marginal effective contribution to the interlayer binding. Further analysis of the dispersive energy term reveals that despite the large differences in the individual atomic polarizabilities the hetero-atomic B-N C6 coefficient is very similar to the homo-atomic C-C coefficient in the hexagonal bulk form resulting in very similar dispersive contribution to the interlayer binding. The overall binding energy curves of both materials are thus very similar predicting practically the same interlayer distance and very similar binding energies.

Magnetically-triggered Nanocomposite Membranes: a Versatile Platform for Triggered Drug Release

Abstract: Drug delivery devices based on nanocomposite membranes containing thermoresponsive nanogels and superparamagnetic nanoparticles have been demonstrated to provide reversible, on-off drug release upon application (and removal) of an oscillating magnetic field. The dose of drug delivered can be tuned by engineering the phase transition temperature of the nanogel, the loading of nanogels in the membrane, and the membrane thickness, allowing for the delivery of drugs over several orders of magnitude of release rates. The zero-order kinetics of drug release through the membranes permit drug doses from a specific device to be tuned according to the duration of the magnetic field. Drugs over a broad range of molecular weights (500-40,000 Da) can be delivered by the same membrane device. Membrane-to-membrane and cycle-to-cycle reproducibility is demonstrated, suggesting the general utility of these membranes for drug delivery.

Unique prospects of graphene-based THz modulators

Abstract: The modulation depth of 2-D electron gas (2DEG) based THz modulators using AlGaAs/GaAs heterostructures with metal gates is inherently limited to 90%) but also severely degrades the modulation depth. The metal losses can be significantly reduced with an alternative material with tunable conductivity. Graphene presents a unique solution to this problem due to its symmetric band structure and extraordinarily high mobility of holes that is comparable to electron mobility in conventional semiconductors. The hole conductivity in graphene can be electrostatically tuned in the graphene-2DEG parallel capacitor configuration, thus more efficiently tuning the THz transmission. In this work, we show that it is possible to achieve a modulation depth of > 90% while simultaneously minimizing signal attenuation to < 5% by tuning the Fermi level at the Dirac point in graphene.

The quasi-free-standing nature of graphene on H-saturated SiC(0001)

Abstract: We report on an investigation of quasi-free-standing graphene on 6H-SiC(0001) which was prepared by intercalation of hydrogen under the buffer layer. Using infrared absorption spectroscopy we prove that the SiC(0001) surface is saturated with hydrogen. Raman spectra demonstrate the conversion of the buffer layer into graphene which exhibits a slight tensile strain and short range defects. The layers are hole doped (p = 5.0-6.5 x 10^12 cm^(-2)) with a carrier mobility of 3,100 cm^2/Vs at room temperature. Compared to graphene on the buffer layer a strongly reduced temperature dependence of the mobility is observed for graphene on H-terminated SiC(0001)which justifies the term "quasi-free-standing".

Rectification at Graphene-Semiconductor Interfaces: Zero-Gap Semiconductor Based Diodes

Abstract: Using current-voltage (I-V) and capacitance-voltage (C-V) measurements, we report on the unusual physics and promising technical applications associated with the formation of Schottky barriers at the interface of a one-atom-thick zero-gap semiconductor (graphene) and conventional semiconductors. When chemical vapor deposited graphene is transferred onto n-type Si, GaAs, 4H-SiC and GaN semiconductor substrates, there is a strong van der Waals attraction that is accompanied by charge transfer across the interface and the formation of a rectifying (Schottky) barrier. Thermionic emission theory in conjunction with the Schottky-Mott model within the context of bond-polarization theory provides a surprisingly good description of the electrical properties. Applications, such as to sensors where in forward bias there is exponential sensitivity to changes in the Schottky barrier height due to the presence of absorbates on the graphene or to analogue devices for which Schottky barriers are integral components are promising because of graphene's mechanical stability, its resistance to diffusion, its robustness at high temperatures and its demonstrated capability to embrace multiple functionalities.

The effects of aggregation and protein corona on the cellular internalization of iron oxide nanoparticles

Abstract: Engineered inorganic nanoparticles are essential components in the development of nanotechnologies. For applications in nanomedicine, particles need to be functionalized to ensure a good dispersibility in biological fluids. In many cases however, functionalization is not sufficient : the particles become either coated by a corona of serum proteins or precipitate out of the solvent. In the present paper, we show that by changing the coating of iron oxide nanoparticles from a low-molecular weight ligand (citrate ions) to small carboxylated polymers (poly(acrylic acid)), the colloidal stability of the dispersion is improved and the adsorption/internalization of iron towards living mammalian cells is profoundly affected. Citrate-coated particles are shown to destabilize in all fetal-calf-serum based physiological conditions tested, whereas the polymer coated particles exhibit an outstanding dispersibility as well as a structure devoid of protein corona. The interactions between nanoparticles and human lymphoblastoid cells are investigated by transmission electron microscopy and flow cytometry. Two types of nanoparticle/cell interactions are underlined. Iron oxides are found either adsorbed on the cellular membranes, or internalized into membrane-bound endocytosis compartments. For the precipitating citrate-coated particles, the kinetics of interactions reveal a massive and rapid adsorption of iron oxide on the cell surfaces. The quantification of the partition between adsorbed and internalized iron was performed from the cytometry data. The results highlight the importance of resilient adsorbed nanomaterials at the cytoplasmic membrane.

Atomic-scale electron-beam sculpting of defect-free graphene nanostructures

Abstract: In order to harvest the many promising properties of graphene in (electronic) applications, a technique is required to cut, shape or sculpt the material on a nanoscale without damage to its atomic structure, as this drastically influences the electronic properties of the nanostructure. Here, we reveal a temperature-dependent self-repair mechanism allowing damage-free atomic-scale sculpting of graphene using a focused electron beam. We demonstrate that by sculpting at temperatures above 600 °C, an intrinsic self-repair mechanism keeps the graphene single-crystalline during cutting, even thought the electron beam induces considerable damage. Self-repair is mediated by mobile carbon ad-atoms constantly repairing the defects caused by the electron beam. Our technique allows reproducible fabrication and simultaneous imaging of single-crystalline free-standing nanoribbons, nanotubes, nanopores, and single carbon chains.

Acoustic spin pumping as the origin of the long-range spin Seebeck effect

Abstract: The spin Seebeck effect (SSE) is known as the generation of 'spin voltage' in a magnet as a result of a temperature gradient. Spin voltage stands for the potential for spins, which drives a spin current. The SSE is of crucial importance in spintronics and energy-conversion technology, since it enables simple and versatile generation of spin currents from heat. The SSE has been observed in a variety of materials ranging from magnetic metals and semiconductors to magnetic insulators. However, the mechanism, the long-range nature, of the SSE in metals is still to be clarified. Here we found that, using a Ni81Fe19/Pt bilayer wire on an insulating sapphire plate, the long-range spin voltage induced by the SSE in magnetic metals is due to phonons. Under a temperature gradient in the sapphire, surprisingly, the voltage generated in the Pt layer is shown to reflect the wire position, although the wire is isolated both electrically and magnetically. This non-local voltage is direct evidence that the SSE is attributed to the coupling of spins and phonons. We demonstrate this coupling by directly injecting sound waves, which realizes the acoustic spin pumping. Our finding opens the door to "acoustic spintronics" in which phonons are exploited for constructing spin-based devices.

Theory of the ground state spin of the NV- center in diamond: II. Spin solutions, time-evolution, relaxation and inhomogeneous dephasing

Abstract: The ground state spin of the negatively charged nitrogen-vacancy center in diamond has many exciting applications in quantum metrology and solid state quantum information processing, including magnetometry, electrometry, quantum memory and quantum optical networks. Each of these applications involve the interaction of the spin with some configuration of electric, magnetic and strain fields, however, to date there does not exist a detailed model of the spin's interactions with such fields, nor an understanding of how the fields influence the time-evolution of the spin and its relaxation and inhomogeneous dephasing. In this work, a general solution is obtained for the spin in any given electric-magnetic-strain field configuration for the first time, and the influence of the fields on the evolution of the spin is examined. Thus, this work provides the essential theoretical tools for the precise control and modeling of this remarkable spin in its current and future applications.