Dave H. A. Blank

TL;DR: In this article, the topmost oxide layer was observed to hydroxylate after immersion in water, which was used to enhance the etch-selectivity of SrO relative to TiO2 in a buffered HF solution.

TL;DR: Based on transport, spectroscopic, and oxygen-annealing experiments, it is concluded that extrinsic defects in the form of oxygen vacancies introduced by the pulsed laser deposition process used by all researchers to date to make these samples is the source of the large carrier densities.

TL;DR: In this article, high temperature X-ray diffraction (HT-XRD), temperature programmed desorption (TPD), thermogravimetric analysis-differential thermal analysis (TGA/DTA) and neutron diffraction were combined to determine the structure and oxygen stoichiometry of SrCo0.8Fe0.2O3−δ (BSCF) up to 1273 K in the pO2 range of 1 to 10−5 atm.

TL;DR: In this article, the authors observed a self-organized conversion of the terminating atomic layer from RuO2 to SrO. This conversion induces an abrupt change in growth mode from layer by layer to growth by step advancement, indicating a large enhancement of the surface diffusivity.

TL;DR: In this article, the growth of spinel ZnMd62O4 M=Co, Rh, and Ir, a ρ-type wide band gap semiconductor by pulsed laser deposition, was reported.