D
Dave H. A. Blank
Researcher at MESA+ Institute for Nanotechnology
Publications - 94
Citations - 4607
Dave H. A. Blank is an academic researcher from MESA+ Institute for Nanotechnology. The author has contributed to research in topics: Thin film & Pulsed laser deposition. The author has an hindex of 33, co-authored 94 publications receiving 4264 citations. Previous affiliations of Dave H. A. Blank include University of Twente.
Papers
More filters
Journal ArticleDOI
Quasi-ideal strontium titanate crystal surfaces through formation of stontium hydroxide
TL;DR: In this article, the topmost oxide layer was observed to hydroxylate after immersion in water, which was used to enhance the etch-selectivity of SrO relative to TiO2 in a buffered HF solution.
Journal ArticleDOI
Origin of Charge Density at LaAlO3 on SrTiO3 Heterointerfaces: Possibility of Intrinsic Doping
Wolter Siemons,Wolter Siemons,Gertjan Koster,Hideki Yamamoto,Hideki Yamamoto,Walter A. Harrison,Gerald Lucovsky,Theodore H. Geballe,Dave H. A. Blank,M. R. Beasley +9 more
TL;DR: Based on transport, spectroscopic, and oxygen-annealing experiments, it is concluded that extrinsic defects in the form of oxygen vacancies introduced by the pulsed laser deposition process used by all researchers to date to make these samples is the source of the large carrier densities.
Journal ArticleDOI
Structure and oxygen stoichiometry of SrCo0.8Fe0.2O3−δ and Ba0.5Sr0.5Co0.8Fe0.2O3−δ
TL;DR: In this article, high temperature X-ray diffraction (HT-XRD), temperature programmed desorption (TPD), thermogravimetric analysis-differential thermal analysis (TGA/DTA) and neutron diffraction were combined to determine the structure and oxygen stoichiometry of SrCo0.8Fe0.2O3−δ (BSCF) up to 1273 K in the pO2 range of 1 to 10−5 atm.
Journal ArticleDOI
Enhanced surface diffusion through termination conversion during epitaxial SrRuO3 growth
TL;DR: In this article, the authors observed a self-organized conversion of the terminating atomic layer from RuO2 to SrO. This conversion induces an abrupt change in growth mode from layer by layer to growth by step advancement, indicating a large enhancement of the surface diffusivity.
Journal ArticleDOI
ZnIr2O4, a p-type transparent oxide semiconductor in the class of spinel zinc-d6-transition metal oxide
TL;DR: In this article, the growth of spinel ZnMd62O4 M=Co, Rh, and Ir, a ρ-type wide band gap semiconductor by pulsed laser deposition, was reported.