D
David J. Meyer
Researcher at United States Naval Research Laboratory
Publications - 134
Citations - 1933
David J. Meyer is an academic researcher from United States Naval Research Laboratory. The author has contributed to research in topics: Molecular beam epitaxy & High-electron-mobility transistor. The author has an hindex of 21, co-authored 126 publications receiving 1440 citations. Previous affiliations of David J. Meyer include United States Department of the Navy & Pennsylvania State University.
Papers
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Journal ArticleDOI
Electrical properties of high permittivity epitaxial SrCaTiO3 grown on AlGaN/GaN heterostructures
Eric N. Jin,Brian P. Downey,Vikrant J. Gokhale,J.A. Roussos,Matthew T. Hardy,Tyler A. Growden,Neeraj Nepal,D. Scott Katzer,Jeffrey P. Calame,David J. Meyer +9 more
TL;DR: In this article, structural and electrical properties of high dielectric constant Sr1−xCaxTiO3 epitaxial layers grown on GaN/GaN/4H-SiC high-electron-mobility transistor structures were demonstrated.
Proceedings ArticleDOI
Device Modeling of Graded III-N HEMTs for Improved Linearity
TL;DR: In this article, a numerical device model is proposed to explore this approach that couples linear electroelasticity, diffusion-drift transport with new mobility models, and density-gradient theory.
Journal ArticleDOI
Phase Identification and Ordered Vacancy Imaging in Epitaxial Metallic Ta2N Thin Films.
TL;DR: In this article, the combined power of high-resolution transmission and aberration-corrected scanning transmission electron microscopy was used for definitive phase identification of tantalum nitrides with different N-sublattice ordering.
Journal ArticleDOI
Effects of growth temperature on electrical properties of GaN/AlN based resonant tunneling diodes with peak current density up to 1.01 MA/cm2
Evan M. Cornuelle,Tyler A. Growden,David F. Storm,Elliott R. Brown,Weidong Zhang,Brian P. Downey,Vikrant J. Gokhale,Laura B. Ruppalt,James G. Champlain,Prudhvi Peri,Martha R. McCartney,David J. Smith,David J. Meyer,Paul R. Berger +13 more
TL;DR: In this article, identical GaN/AlN resonant tunneling diode structures were grown on free-standing bulk GaN at substrate temperatures of 760 °C, 810 °C and 860 °C via plasma-assisted molecular beam epitaxy.
Journal ArticleDOI
Measurements and numerical calculations of thermal conductivity to evaluate the quality of β-gallium oxide thin films grown on sapphire and silicon carbide by molecular beam epitaxy
Diego Vaca,Matthew M. Barry,Luke Yates,Neeraj Nepal,D. S. Katzer,Brian P. Downey,Virginia D. Wheeler,Luke O. Nyakiti,David J. Meyer,Samuel Graham,Satish Kumar +10 more
TL;DR: In this article , a method to obtain insight into lower thermal conductivity of β-Ga2O3 thin films grown by molecular beam epitaxy (MBE) on c-plane sapphire and 4H-SiC substrates was reported.