D
David J. Meyer
Researcher at United States Naval Research Laboratory
Publications - 134
Citations - 1933
David J. Meyer is an academic researcher from United States Naval Research Laboratory. The author has contributed to research in topics: Molecular beam epitaxy & High-electron-mobility transistor. The author has an hindex of 21, co-authored 126 publications receiving 1440 citations. Previous affiliations of David J. Meyer include United States Department of the Navy & Pennsylvania State University.
Papers
More filters
Journal ArticleDOI
Proximity effects of beryllium-doped GaN buffer layers on the electronic properties of epitaxial AlGaN/GaN heterostructures
David F. Storm,D. S. Katzer,David A. Deen,Robert Bass,David J. Meyer,J.A. Roussos,Steven C. Binari,Tanja Paskova,Edward A. Preble,Keith R. Evans +9 more
TL;DR: In this article, the authors show that the output conductance of devices fabricated on these GaN heterostructures increases as d(sub UID) decreases below 200 nm, and devices with gate lengths of 240 nm and 1 micron exhibited no significant difference in output conductances.
Journal ArticleDOI
Surface preparation of freestanding GaN substrates for homoepitaxial GaN growth by rf-plasma MBE
David F. Storm,Thomas O. McConkie,Matthew T. Hardy,D. Scott Katzer,Neeraj Nepal,David J. Meyer,David J. Smith +6 more
TL;DR: In this article, the surfaces of freestanding, Ga-polar, hydride vapor-phase epitaxy grown GaN substrates were used for homoepitaxial GaN growth by plasma-assisted molecular beam epitaxy (MBE).
Journal ArticleDOI
Temperature and Electric Field Induced Metal-Insulator Transition in Atomic Layer Deposited VO2 Thin Films
Marko J. Tadjer,Virginia D. Wheeler,Brian P. Downey,Zachary R. Robinson,David J. Meyer,Charles R. Eddy,Fritz J. Kub +6 more
TL;DR: Amorphous vanadium oxide (VO 2 ) films deposited by atomic layer deposition (ALD) were crystallized with an ex situ anneal at 660-670°C for 1-2h under a low oxygen pressure (10 −4 to 10 −5 ǫ) as discussed by the authors.
Journal ArticleDOI
X-Band Power and Linearity Performance of Compositionally Graded AlGaN Channel Transistors
Shahadat H. Sohel,Andy Xie,Edward Beam,Hao Xue,J.A. Roussos,Towhidur Razzak,Sanyam Bajaj,Yu Cao,David J. Meyer,Wu Lu,Siddharth Rajan +10 more
TL;DR: In this paper, the power and linearity performance of metal organic chemical vapor deposition grown AlGaN channel polarization-graded field effect transistor (PolFET) transistors with 3-D electron channels showed nearly flat transconductance profiles.
Journal ArticleDOI
Compositionally Graded III-N HEMTs for Improved Linearity: A Simulation Study
TL;DR: In this article, the authors explored the consequences of saturation velocity, grading profile, alloy scattering, and device scaling on the performance of high-electron mobility transistors (HEMTs) for power amplifier applications.