David J. Perello

TL;DR: The demonstrated strain-modulation of the phase transition temperature is expected to be compatible with other T MDs enabling the 2D electronics utilizing polymorphism of TMDs along with the established materials.

TL;DR: Using this concept of seamless stitching, synthesis of 6 cm × 3 cm monocrystalline graphene without grain boundaries on polished copper (111) foil is possible, which is only limited by the chamber size.

TL;DR: The fabrication of highly stretchable and transparent field-effect transistors combining graphene/single-walled carbon nanotube (SWCNT) electrodes and a SWCNT-network channel with a geometrically wrinkled inorganic dielectric layer that retained performance under strains as high as 20% without appreciable leakage current increases or physical degradation is reported.

TL;DR: This work reports unipolar n-type black phosphorus transistors with switching polarity control via contact-metal engineering and flake thickness, combined with oxygen and moisture-free fabrication, demonstrating a leap in n- type performance and exemplify the logical switching capabilities of black phosphorus.

TL;DR: This work explores misorientation angle-dependent electrical transport at grain boundaries in monolayer MoS2 by correlating the atomic defect structures of measured devices analysed with transmission electron microscopy and first-principles calculations.