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Dinh Loc Duong
Researcher at Sungkyunkwan University
Publications - 75
Citations - 4236
Dinh Loc Duong is an academic researcher from Sungkyunkwan University. The author has contributed to research in topics: Graphene & Carbon nanotube. The author has an hindex of 29, co-authored 69 publications receiving 3331 citations. Previous affiliations of Dinh Loc Duong include Samsung & Max Planck Society.
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van der Waals Layered Materials: Opportunities and Challenges
TL;DR: The vdW materials library, technology relevance, and specialties of vdw materials covering the vdD interaction, strong Coulomb interaction, layer dependence, dielectric screening engineering, work function modulation, phase engineering, heterostructures, stability, growth issues, and the remaining challenges are reviewed.
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Probing graphene grain boundaries with optical microscopy
Dinh Loc Duong,Gang Hee Han,Seung Mi Lee,Fethullah Güneş,Eun Sung Kim,Sung Tae Kim,Heetae Kim,Quang Huy Ta,Kang Pyo So,Seok Jun Yoon,Seung Jin Chae,Young Woo Jo,Min-Ho Park,Sang Hoon Chae,Seong Chu Lim,Jae-Young Choi,Jae-Young Choi,Young Hee Lee +17 more
Abstract: Grain boundaries in graphene are formed by the joining of islands during the initial growth stage, and these boundaries govern transport properties and related device performance. Although information on the atomic rearrangement at graphene grain boundaries can be obtained using transmission electron microscopy and scanning tunnelling microscopy, large-scale information regarding the distribution of graphene grain boundaries is not easily accessible. Here we use optical microscopy to observe the grain boundaries of large-area graphene (grown on copper foil) directly, without transfer of the graphene. This imaging technique was realized by selectively oxidizing the underlying copper foil through graphene grain boundaries functionalized with O and OH radicals generated by ultraviolet irradiation under moisture-rich ambient conditions: selective diffusion of oxygen radicals through OH-functionalized defect sites was demonstrated by density functional calculations. The sheet resistance of large-area graphene decreased as the graphene grain sizes increased, but no strong correlation with the grain size of the copper was revealed, in contrast to a previous report. Furthermore, the influence of graphene grain boundaries on crack propagation (initialized by bending) and termination was clearly visualized using our technique. Our approach can be used as a simple protocol for evaluating the grain boundaries of other two-dimensional layered structures, such as boron nitride and exfoliated clays.
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Confocal absorption spectral imaging of MoS2: optical transitions depending on the atomic thickness of intrinsic and chemically doped MoS2
Krishna P. Dhakal,Dinh Loc Duong,Jubok Lee,Honggi Nam,Min Su Kim,Min Kan,Young Hee Lee,Jeongyong Kim +7 more
TL;DR: The results indicate that confocal absorption spectral imaging can provide comprehensive information on optical transitions of microscopic size intrinsic and doped two-dimensional layered materials.
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Seamless Stitching of Graphene Domains on Polished Copper (111) Foil
Van Luan Nguyen,Bong Gyu Shin,Dinh Loc Duong,Sung Tae Kim,David J. Perello,Young Jin Lim,Qinghong Yuan,Feng Ding,Hu Young Jeong,Hyeon Suk Shin,Seung Mi Lee,Sang Hoon Chae,Quoc An Vu,Seung Hee Lee,Young Hee Lee +14 more
TL;DR: Using this concept of seamless stitching, synthesis of 6 cm × 3 cm monocrystalline graphene without grain boundaries on polished copper (111) foil is possible, which is only limited by the chamber size.
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Transferred wrinkled Al2O3 for highly stretchable and transparent graphene–carbon nanotube transistors
Sang Hoon Chae,Woo Jong Yu,Woo Jong Yu,Jung Jun Bae,Dinh Loc Duong,David J. Perello,Hye Yun Jeong,Quang Huy Ta,Thuc Hue Ly,Quoc An Vu,Minhee Yun,Xiangfeng Duan,Young Hee Lee +12 more
TL;DR: The fabrication of highly stretchable and transparent field-effect transistors combining graphene/single-walled carbon nanotube (SWCNT) electrodes and a SWCNT-network channel with a geometrically wrinkled inorganic dielectric layer that retained performance under strains as high as 20% without appreciable leakage current increases or physical degradation is reported.