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David N. Ruzic

Researcher at University of Illinois at Urbana–Champaign

Publications -  346
Citations -  4944

David N. Ruzic is an academic researcher from University of Illinois at Urbana–Champaign. The author has contributed to research in topics: Plasma & Extreme ultraviolet lithography. The author has an hindex of 35, co-authored 337 publications receiving 4434 citations. Previous affiliations of David N. Ruzic include Urbana University & Princeton University.

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Lithium?metal infused trenches (LiMIT) for heat removal in fusion devices

TL;DR: In this article, a self-pumping liquid lithium flow in metal trenches has been made using a lithium-metal infused trench (LiMIT) tile and is reported to be selfpumping and uses thermoelectric magnetohydrodynamics to remove heated lithium and replenish it at a lower temperature Flow velocities have been measured and compared with theoretical predictions
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The effects of surface roughness characterized by fractal geometry on sputtering

TL;DR: Fractal geometry has been added to the binary-collision TRIM computer code to simulate realistic atomic-scale surface roughness as discussed by the authors, which significantly affects TRIM sputtering yields and reflection coefficients at low energies and non-normal angles of incidence.
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A hydrocarbon reaction model for low temperature hydrogen plasmas and an application to the Joint European Torus

TL;DR: In this paper, a model of collisional processes of hydrocarbons in hydrogen plasmas has been developed to aid in computer modeling efforts relevant to plasma-surface interactions, and the proton impact charge exchange reaction rates are calculated from a theoretical model using molecular polarizabilities.
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Directional deposition of Cu into semiconductor trench structures using ionized magnetron sputtering

TL;DR: In this paper, the ionized magnetron sputter deposition process has been used to fill trenches of 600 nm width and 1.1 AR with Cu near room temperature, and appears to be extendable to more aggressive dimensions.
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Thin, high atomic weight refractory film deposition for diffusion barrier, adhesion layer, and seed layer applications

TL;DR: In this article, it was shown that high mass refractory films with conventional, noncollimated magnetron sputtering at low pressures show better than expected conformality which is dependent on the degree of directionality of the depositing atoms: the conformality increases as the directionality increases.