David Trémouilles

TL;DR: In this article, a method for manufacturing a MuGFET ESD protection device having a given layout by means of a given manufacturing process, the method comprising selecting multiple interdependent layout and process parameters of which a first set are fixed by a manufacturing process and a second set are variable.

TL;DR: In this paper, the authors studied the properties of boron-doped diamond layers with metallic conduction and found that the position of the main Raman bands is proportional to borone concentration, and attributed the downshift and broadening of the diamond line to the domain size effect caused by scattering on borons impurities, secondly to the Fano effect due to electronic Raman interaction, and finally to lattice expansion.

TL;DR: In this paper, an improved calibration methodology for simultaneous capturing of voltage and current during an HBM pulse is presented, and the capability of this new methodology for ESD protection device characterization and development is demonstrated using the quasi-static and transient response analysis of silicon-controlled rectifier devices.

TL;DR: In this article, the authors proposed a novel analysis of the Raman spectrum of boron-doped diamond based on classical models of electronic Raman scattering and Fano effect.

TL;DR: In this article, conditions for the elaboration of nanostructured varistors by Spark Plasma Sintering (SPS) are investigated, using 8 nm zinc oxide nanoparticles synthesized following an organometallic approach.