S
Steven Thijs
Researcher at Katholieke Universiteit Leuven
Publications - 126
Citations - 2142
Steven Thijs is an academic researcher from Katholieke Universiteit Leuven. The author has contributed to research in topics: Electrostatic discharge & CMOS. The author has an hindex of 20, co-authored 122 publications receiving 2074 citations. Previous affiliations of Steven Thijs include IMEC & Sarnoff Corporation.
Papers
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Journal ArticleDOI
Design Issues and Considerations for Low-Cost 3-D TSV IC Technology
G. Van der Plas,Paresh Limaye,Igor Loi,Abdelkarim Mercha,Herman Oprins,C. Torregiani,Steven Thijs,Dimitri Linten,Michele Stucchi,G. Katti,Dimitrios Velenis,Vladimir Cherman,Bart Vandevelde,V. Simons,I. De Wolf,Riet Labie,D. Perry,S Bronckers,N. Minas,Miro Cupac,Wouter Ruythooren,J. Van Olmen,Alain Phommahaxay,M. de Potter de ten Broeck,A. Opdebeeck,Michal Rakowski,B. De Wachter,Morin Dehan,Marc Nelis,Rahul Agarwal,Antonio Pullini,Federico Angiolini,Luca Benini,Wim Dehaene,Youssef Travaly,Eric Beyne,Pol Marchal +36 more
TL;DR: Experimental results of a 3-D Network-on-Chip implementation demonstrate that the NoC concept can be extended from 2-D SoC to 3- D SoCs at low area and power and digital gates can directly drive signals through TSVs at high speed and low power.
Journal ArticleDOI
A 5 GHz fully integrated ESD-protected low-noise amplifier in 90 nm RF CMOS
Dimitri Linten,Steven Thijs,M.I. Natarajan,Piet Wambacq,Wutthinan Jeamsaksiri,J. Ramos,Abdelkarim Mercha,S. Jenei,S. Donnay,Stefaan Decoutere +9 more
TL;DR: In this paper, a plug-and-play 5 GHz low-power ESD-protected low-noise amplifier (LNA) is presented, which has an ESD protection level up to 1.4 A transmission line pulse (TLP) current, corresponding to 2kV Human Body Model (HBM) stress.
Patent
Design Methodology for MuGFET ESD Protection Devices
TL;DR: In this article, a method for manufacturing a MuGFET ESD protection device having a given layout by means of a given manufacturing process, the method comprising selecting multiple interdependent layout and process parameters of which a first set are fixed by a manufacturing process and a second set are variable.
Proceedings ArticleDOI
Low-power 5 GHz LNA and VCO in 90 nm RF CMOS
Dimitri Linten,L. Aspemyr,W. Jeamsaksiri,J. Ramos,Abdelkarim Mercha,S. Jenei,Steven Thijs,R. Garcia,Harald Jacobsson,Piet Wambacq,Stéphane Donnay,Stefaan Decoutere +11 more
TL;DR: In this article, the potential of 90 nm CMOS technology for low power RF front-ends is demonstrated with fully integrated lowvoltage Low-Noise Amplifiers (LNA) and Voltage-Controlled Oscillators (VCO).
Proceedings ArticleDOI
A low-power 57-to-66GHz transceiver in 40nm LP CMOS with −17dB EVM at 7Gb/s
V. Vidojkovic,Giovanni Mangraviti,Khaled Khalaf,Viki Szortyka,Kristof Vaesen,Wim Van Thillo,Bertrand Parvais,M. Libois,Steven Thijs,John R. Long,Charlotte Soens,Piet Wambacq +11 more
TL;DR: A digital LP 40nm CMOS 60GHz transceiver (TRX) IC is presented that obtains an EVM better than -17dB in all 4 channels and helps to improve the mm-Wave circuit performance.