D
David Vanderbilt
Researcher at Rutgers University
Publications - 451
Citations - 76819
David Vanderbilt is an academic researcher from Rutgers University. The author has contributed to research in topics: Wannier function & Ferroelectricity. The author has an hindex of 104, co-authored 426 publications receiving 67024 citations. Previous affiliations of David Vanderbilt include Rowland Institute for Science & University of Geneva.
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Generalized-gradient-functional treatment of strain in density-functional perturbation theory
TL;DR: In this paper, the direct calculation of elastic and piezoelectric tensors utilizing density-functional perturbation theory has been extended to encompass generalized-gradient-approximation functionals.
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Theoretical study of the cohesive and structural properties of Mo and W in bcc, fcc, and hcp structures
TL;DR: The structural properties of Mo and W in the bcc, fcc, and hcp structures are calculated using a fully-self-consistent pseudopotential linear combination of atomic orbitals method and it is found that the difference in the sum of eigenvalues gives the correct sign but not the magnitude for the difference of total energy between the bCC and fcc structures.
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Near-field infrared spectroscopy of monolayer MnPS 3
Sabine N. Neal,Heung-Sik Kim,K. A. Smith,Amanda Haglund,David Mandrus,Hans A. Bechtel,G. Lawrence Carr,Kristjan Haule,David Vanderbilt,Janice L. Musfeldt +9 more
TL;DR: In this paper, the authors measured the near-field infrared response of MnPS3 in bulk, few-, and single-layer form and compared their findings with traditional far-field vibrational spectroscopies, a symmetry analysis, and first-principles lattice dynamics calculations.
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Column-V acceptors in ZnSe.
TL;DR: The structural and electronic properties of substitutional phosphorus and nitrogen impurities in ZnSe are studied using pseudopotential total-energy calculations to predict minimal-energy configurations for nitrogen in the positive charge state.
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Electric field dependence of optical phonon frequencies in wurtzite GaN observed in GaN high electron mobility transistors
TL;DR: In this article, the authors decouple the simultaneous effects of temperature, stress, strain, and electric field on the optical phonon frequencies of gallium nitride (GaN) high electron mobility transistors (HEMTs).