Dawei Zheng

TL;DR: A high-speed silicon optical modulator with a low V(pp) (peak-to-peak driving voltage) and ultralow energy consumption based on a microring resonator, with the refractive index modulation achieved by electric-field-induced carrier depletion in a reverse-biased lateral pn diode embedded in the ring structure.

TL;DR: In this paper, a high speed Ge photodetector with a large cross-section silicon-on-insulate (SOI) waveguide is demonstrated, in which the Ge p-i-n junction is placed in the horizontal direction to enable very high speed operation.

TL;DR: A very efficient high speed silicon modulator with an ultralow pi-phase-shift voltage-length product V(pi)L = 1.4V-cm is demonstrated, achieved through the optimization of the overlap region of carriers and photons.

TL;DR: A vertical p-i-n thin-film germanium photodetector integrated on 3microm thick large core silicon-on-insulator (SOI) waveguides demonstrates very high external responsivity due to the low fiber coupling loss to the large core waveguide.

TL;DR: With wavelength division multiplexing (WDM) enabled OPxC, very high bandwidth density I/O, orders of magnitude higher than the traditional electrical I/W, can be achieved for silicon chips.