Low V_pp, ultralow-energy, compact, high-speed silicon electro-optic modulator
Po Dong,Shirong Liao,Dazeng Feng,Hong Liang,Dawei Zheng,Roshanak Shafiiha,Cheng-Chih Kung,Wei Qian,Guoliang Li,Xuezhe Zheng,Ashok V. Krishnamoorthy,Mehdi Asghari +11 more
TLDR
A high-speed silicon optical modulator with a low V(pp) (peak-to-peak driving voltage) and ultralow energy consumption based on a microring resonator, with the refractive index modulation achieved by electric-field-induced carrier depletion in a reverse-biased lateral pn diode embedded in the ring structure.Abstract:
We present a high-speed silicon optical modulator with a low Vpp (peak-to-peak driving voltage) and ultralow energy consumption based on a microring resonator, with the refractive index modulation achieved by electric-field-induced carrier depletion in a reverse-biased lateral pn diode embedded in the ring structure. With a Vpp of 2 V, we demonstrate a silicon modulator with a 3 dB bandwidth of 11 GHz, a modulation depth of 6.5 dB together with an insertion loss of 2 dB, ultralow energy consumption of 50 fJ per bit, and a small device active area of ~1000 µm2.read more
Citations
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Journal ArticleDOI
Silicon optical modulators
TL;DR: The techniques that have, and will, be used to implement silicon optical modulators, as well as the outlook for these devices, and the candidate solutions of the future are discussed.
Journal ArticleDOI
Silicon microring resonators
Wim Bogaerts,P. De Heyn,T. Van Vaerenbergh,K. De Vos,S. Kumar Selvaraja,Tom Claes,Pieter Dumon,Peter Bienstman,D. Van Thourhout,Roel Baets +9 more
TL;DR: An overview of the current state-of-the-art in silicon nanophotonic ring resonators is presented in this paper, where the basic theory of ring resonance is discussed and applied to the peculiarities of submicron silicon photonic wire waveguides: the small dimensions and tight bend radii, sensitivity to perturbations and the boundary conditions of the fabrication processes.
Journal ArticleDOI
High-speed plasmonic phase modulators
Argishti Melikyan,Luca Alloatti,A. Muslija,David Hillerkuss,Philipp Schindler,Jingshi Li,Robert Palmer,Dietmar Korn,S. Muehlbrandt,D. Van Thourhout,Baoquan Chen,Raluca Dinu,Martin Sommer,Christian Koos,Manfred Kohl,Wolfgang Freude,Juerg Leuthold +16 more
TL;DR: In this paper, a phase modulator that is only 29 µm long and operates at 65 GHz was demonstrated using plasmonics and the Pockels effect in a nonlinear polymer.
Journal ArticleDOI
50-Gb/s Silicon Optical Modulator
David J. Thomson,Frederic Y. Gardes,J-M. Fedeli,Sanja Zlatanovic,Youfang Hu,Bill P.-P. Kuo,Evgeny Myslivets,Nikola Alic,Stojan Radic,Goran Z. Mashanovich,Graham T. Reed +10 more
TL;DR: In this paper, the authors presented the first optical modulation at 50 Gb/s with a 3.1dB extinction ratio obtained from carrier depletion based phase shifter incorporated in a Mach-Zehnder interferometer.
Journal ArticleDOI
An ultralow power athermal silicon modulator
Erman Timurdogan,Cheryl Sorace-Agaskar,Jie Sun,Ehsan Shah Hosseini,Aleksandr Biberman,Michael R. Watts +5 more
TL;DR: In this article, the authors demonstrate a silicon modulator operating with less than one femtojoule energy and are able to compensate for thermal drift over a 7.5°C temperature range.
References
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Journal ArticleDOI
Electrooptical effects in silicon
TL;DR: In this article, a numerical Kramers-Kronig analysis is used to predict the refractive index perturbations produced in crystalline silicon by applied electric fields or by charge carriers.
Journal ArticleDOI
Micrometre-scale silicon electro-optic modulator
TL;DR: Electro-optic modulators are one of the most critical components in optoelectronic integration, and decreasing their size may enable novel chip architectures, and here a high-speed electro-optical modulator in compact silicon structures is experimentally demonstrated.
Journal ArticleDOI
The Past, Present, and Future of Silicon Photonics
TL;DR: In this paper, the state-of-the-art CMOS silicon-on-insulator (SOI) foundries are now being utilized in a crucial test of 1.55mum monolithic optoelectronic (OE) integration, a test sponsored by the Defense Advanced Research Projects Agency (DARPA).
Journal ArticleDOI
A high-speed silicon optical modulator based on a metal–oxide–semiconductor capacitor
Ansheng Liu,Richard Jones,Ling Liao,Dean A. Samara-Rubio,Doron Rubin,Oded Cohen,Remus Nicolaescu,Mario J. Paniccia +7 more
TL;DR: An approach based on a metal–oxide–semiconductor (MOS) capacitor structure embedded in a silicon waveguide that can produce high-speed optical phase modulation is described and an all-silicon optical modulator with a modulation bandwidth exceeding 1 GHz is demonstrated.
Journal Article
Silicon photonics
TL;DR: The silicon chip has been the mainstay of the electronics industry for the last 40 years and has revolutionized the way the world operates as mentioned in this paper, however, any optical solution must be based on low-cost technologies if it is to be applied to the mass market.