Vertical p-i-n germanium photodetector with high external responsivity integrated with large core Si waveguides
Ning-Ning Feng,Po Dong,Dawei Zheng,Shirong Liao,Hong Liang,Roshanak Shafiiha,Dazeng Feng,Guoliang Li,John E. Cunningham,Ashok V. Krishnamoorthy,Mehdi Asghari +10 more
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A vertical p-i-n thin-film germanium photodetector integrated on 3microm thick large core silicon-on-insulator (SOI) waveguides demonstrates very high external responsivity due to the low fiber coupling loss to the large core waveguide.Abstract:
We report a vertical p-i-n thin-film germanium photodetector integrated on 3microm thick large core silicon-on-insulator (SOI) waveguides. The device demonstrates very high external responsivity due to the low fiber coupling loss to the large core waveguides. The germanium width and thickness are carefully designed to achieve high responsivity yet retain high-speed performance. Even with fiber coupling loss included, the device has demonstrated greater than 0.7A/W external responsivity at 1550nm for TM polarization and 0.5A/W for TE polarization. A low dark current of 0.2microA at -0.5V bias is reported. 3dB bandwidths of 12GHz and 8.3GHz at -2.5V bias are also reported for 100microm and 200microm long devices, respectively. The device can cover the communication wavelength spectrum up to 1620nm with a relatively flat responsivity of >0.5A/W. Further studies suggest that with a modified design the device is capable of achieving 1A/W external responsivity for both TE and TM polarizations and greater than 30GHz bandwidth.read more
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Recent advances in silicon-based passive and active optical interconnects
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TL;DR: This paper presents some of the notable advances in silicon-based passive and active optical interconnect components, and highlights some of their key contributions.
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Ge-Photodetectors for Si-Based Optoelectronic Integration
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TL;DR: The recent progress in the development and integration of Ge-photodetectors on Si-based photonics will be comprehensively reviewed, along with remaining technological issues to be overcome and future research trends.
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High speed carrier-depletion modulators with 1.4V-cm V(pi)L integrated on 0.25microm silicon-on-insulator waveguides.
Ning-Ning Feng,Shirong Liao,Dazeng Feng,Po Dong,Dawei Zheng,Hong Liang,Roshanak Shafiiha,Guoliang Li,John E. Cunningham,Ashok V. Krishnamoorthy,Mehdi Asghari +10 more
TL;DR: A very efficient high speed silicon modulator with an ultralow pi-phase-shift voltage-length product V(pi)L = 1.4V-cm is demonstrated, achieved through the optimization of the overlap region of carriers and photons.
Journal ArticleDOI
Ultra-efficient 10Gb/s hybrid integrated silicon photonic transmitter and receiver
Xuezhe Zheng,Dinesh Patil,Jon Lexau,Frankie Liu,Guoliang Li,Hiren D. Thacker,Ying Luo,Ivan Shubin,Jieda Li,Jin Yao,Po Dong,Dazeng Feng,Mehdi Asghari,Thierry Pinguet,Attila Mekis,Philip Amberg,Michael Dayringer,Jon Gainsley,Hesam Fathi Moghadam,Elad Alon,Kannan Raj,Ron Ho,John E. Cunningham,Ashok V. Krishnamoorthy +23 more
TL;DR: The scalable hybrid integration enables continued photonic device improvements by leveraging advanced CMOS technologies with maximum flexibility, which is critical for developing ultra-low power high performance photonic interconnects for future computing systems.
Journal ArticleDOI
30GHz Ge electro-absorption modulator integrated with 3 μm silicon-on-insulator waveguide.
Ning-Ning Feng,Dazeng Feng,Shirong Liao,Xin Wang,Po Dong,Hong Liang,Cheng-Chih Kung,Wei Qian,Joan Fong,Roshanak Shafiiha,Ying Luo,J. E. Cunningham,Ashok V. Krishnamoorthy,Mehdi Asghari +13 more
TL;DR: A compact waveguide-based high-speed Ge electro-absorption (EA) modulator integrated with a single mode 3 µm silicon-on-isolator (SOI) waveguide that demonstrates large signal modulation at high transmission rate is demonstrated.
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