The electronic and optical properties and the recent progress in applications of 2D semiconductor transition metal dichalcogenides with emphasis on strong excitonic effects, and spin- and valley-dependent properties are reviewed. Recent advances in the development of atomically thin layers of van der Waals bonded solids have opened up new possibilities for the exploration of 2D physics as well as for materials for applications. Among them, semiconductor transition metal dichalcogenides, MX2 (M = Mo, W; X = S, Se), have bandgaps in the near-infrared to the visible region, in contrast to the zero bandgap of graphene. In the monolayer limit, these materials have been shown to possess direct bandgaps, a property well suited for photonics and optoelectronics applications. Here, we review the electronic and optical properties and the recent progress in applications of 2D semiconductor transition metal dichalcogenides with emphasis on strong excitonic effects, and spin- and valley-dependent properties.

Photonics and optoelectronics of 2D semiconductor transition metal dichalcogenides

We present the science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems, targeting an evolution in technology, that might lead to impacts and benefits reaching into most areas of society. This roadmap was developed within the framework of the European Graphene Flagship and outlines the main targets and research areas as best understood at the start of this ambitious project. We provide an overview of the key aspects of graphene and related materials (GRMs), ranging from fundamental research challenges to a variety of applications in a large number of sectors, highlighting the steps necessary to take GRMs from a state of raw potential to a point where they might revolutionize multiple industries. We also define an extensive list of acronyms in an effort to standardize the nomenclature in this emerging field.

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Science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems

Flexible electronics offer a wide-variety of applications such as flexible circuits, flexible displays, flexible solar cells, skin-like pressure sensors, and conformable RFID tags. Carbon nanotubes (CNTs) are a promising material for flexible electronics, both as the channel material in field-effect transistors (FETs) and as transparent electrodes, due to their high intrinsic carrier mobility, conductivity, and mechanical flexibility. In this feature article, we review the recent progress of CNTs in flexible electronics by describing both the processing and the applications of CNT-based flexible devices. To employ CNTs as the channel material in FETs, single-walled carbon nanotubes (SWNTs) are used. There are generally two methods of depositing SWNTs on flexible substrates—transferring CVD-grown SWNTs or solution-depositing SWNTs. Since CVD-grown SWNTs can be highly aligned, they often outperform solution-processed SWNT films that are typically in the form of random network. However, solution-based SWNTs can be printed at a large-scale and at low-cost, rendering them more appropriate for manufacturing. In either case, the removal of metallic SWNTs in an effective and a scalable manner is critical, which must still be developed and optimized. Nevertheless, promising results demonstrating SWNT-based flexible circuits, displays, RF-devices, and biochemical sensors have been reported by various research groups, proving insight into the exciting possibilities of SWNT-based FETs. In using carbon nanotubes as transparent electrodes (TEs), two main strategies have been implemented to fabricate highly conductive, transparent, and mechanically compliant films—superaligned films of CNTs drawn from vertically grown CNT forests using the “dry-drawing” technique and the deposition or embedding of CNTs onto flexible or stretchable substrates. The main challenge for CNT based TEs is to fabricate films that are both highly conductive and transparent. These CNT based TEs have been used in stretchable and flexible pressure, strain, and chemical and biological sensors. In addition, they have also been used as the anode and cathode in flexible light emitting diodes, solar cells, and supercapacitors. In summary, there are a number of challenges yet to overcome to optimize the processing and performance of CNT-based flexible electronics; nonetheless, CNTs remain a highly suitable candidate for various flexible electronic applications in the near future.

A review of fabrication and applications of carbon nanotube film-based flexible electronics

In recent years, enhanced light-matter interactions through a plethora of dipole-type polaritonic excitations have been observed in two-dimensional (2D) layered materials. In graphene, electrically tunable and highly confined plasmon-polaritons were predicted and observed, opening up opportunities for optoelectronics, bio-sensing and other mid-infrared applications. In hexagonal boron nitride, low-loss infrared-active phonon-polaritons exhibit hyperbolic behaviour for some frequencies, allowing for ray-like propagation exhibiting high quality factors and hyperlensing effects. In transition metal dichalcogenides, reduced screening in the 2D limit leads to optically prominent excitons with large binding energy, with these polaritonic modes having been recently observed with scanning near-field optical microscopy. Here, we review recent progress in state-of-the-art experiments, and survey the vast library of polaritonic modes in 2D materials, their optical spectral properties, figures of merit and application space. Taken together, the emerging field of 2D material polaritonics and their hybrids provide enticing avenues for manipulating light-matter interactions across the visible, infrared to terahertz spectral ranges, with new optical control beyond what can be achieved using traditional bulk materials.

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Polaritons in layered two-dimensional materials

https://cyberleninka.org/article/n/323323.pdf

Production and processing of graphene and 2d crystals

Atomically thin transition metal dichalcogenides have emerged as promising candidates for sensitive photodetection. Here, we report a photoconductivity study of biased mono- and bilayer molybdenum disulfide field-effect transistors. We identify photovoltaic and photoconductive effects, which both show strong photogain. The photovoltaic effect is described as a shift in transistor threshold voltage due to charge transfer from the channel to nearby molecules, including SiO2 surface-bound water. The photoconductive effect is attributed to the trapping of carriers in band tail states in the molybdenum disulfide itself. A simple model is presented that reproduces our experimental observations, such as the dependence on incident optical power and gate voltage. Our findings offer design and engineering strategies for atomically thin molybdenum disulfide photodetectors, and we anticipate that the results are generalizable to other transition metal dichalcogenides as well.

Mechanisms of Photoconductivity in Atomically Thin MoS2

Machine vision technology has taken huge leaps in recent years, and is now becoming an integral part of various intelligent systems, including autonomous vehicles and robotics. Usually, visual information is captured by a frame-based camera, converted into a digital format and processed afterwards using a machine-learning algorithm such as an artificial neural network (ANN)1. The large amount of (mostly redundant) data passed through the entire signal chain, however, results in low frame rates and high power consumption. Various visual data preprocessing techniques have thus been developed2-7 to increase the efficiency of the subsequent signal processing in an ANN. Here we demonstrate that an image sensor can itself constitute an ANN that can simultaneously sense and process optical images without latency. Our device is based on a reconfigurable two-dimensional (2D) semiconductor8,9 photodiode10-12 array, and the synaptic weights of the network are stored in a continuously tunable photoresponsivity matrix. We demonstrate both supervised and unsupervised learning and train the sensor to classify and encode images that are optically projected onto the chip with a throughput of 20 million bins per second.

Ultrafast machine vision with 2D material neural network image sensors

Transparent conductors based on few-layer graphene (FLG) intercalated with ferric chloride (FeCl(3)) have an outstandingly low sheet resistance and high optical transparency. FeCl(3)-FLGs outperform the current limit of transparent conductors such as indium tin oxide, carbon-nanotube films, and doped graphene materials. This makes FeCl(3)-FLG materials the best transparent conductor for optoelectronic devices.

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adma.201200489

Novel Highly Conductive and Transparent Graphene‐Based Conductors

The advent of microcomputers in the 1970s has dramatically changed our society. Since then, microprocessors have been made almost exclusively from silicon, but the ever-increasing demand for higher integration density and speed, lower power consumption and better integrability with everyday goods has prompted the search for alternatives. Germanium and III-V compound semiconductors are being considered promising candidates for future high-performance processor generations and chips based on thin-film plastic technology or carbon nanotubes could allow for embedding electronic intelligence into arbitrary objects for the Internet-of-Things. Here, we present a 1-bit implementation of a microprocessor using a two-dimensional semiconductor-molybdenum disulfide. The device can execute user-defined programs stored in an external memory, perform logical operations and communicate with its periphery. Our 1-bit design is readily scalable to multi-bit data. The device consists of 115 transistors and constitutes the most complex circuitry so far made from a two-dimensional material.

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A microprocessor based on a two-dimensional semiconductor

Strain engineering is widely used in material science to tune the (opto-)electronic properties of materials and enhance the performance of devices. Two-dimensional atomic crystals are a versatile playground to study the influence of strain, as they can sustain very large deformations without breaking. Various optical techniques have been employed to probe strain in two-dimensional materials, including micro-Raman and photoluminescence spectroscopy. Here we demonstrate that optical second harmonic generation constitutes an even more powerful technique, as it allows extraction of the full strain tensor with a spatial resolution below the optical diffraction limit. Our method is based on the strain-induced modification of the nonlinear susceptibility tensor due to a photoelastic effect. Using a two-point bending technique, we determine the photoelastic tensor elements of molybdenum disulfide. Once identified, these parameters allow us to spatially image the two-dimensional strain field in an inhomogeneously strained sample.

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Dmitry K. Polyushkin

Papers

Mechanisms of Photoconductivity in Atomically Thin MoS2

Ultrafast machine vision with 2D material neural network image sensors

Novel Highly Conductive and Transparent Graphene‐Based Conductors

A microprocessor based on a two-dimensional semiconductor

Optical imaging of strain in two-dimensional crystals