Materials research has driven the development of modern nano-electronic devices. In particular, research in magnetic thin films has revolutionized the development of spintronic devices1,2 because identifying new magnetic materials is key to better device performance and design. Van der Waals crystals retain their chemical stability and structural integrity down to the monolayer and, being atomically thin, are readily tuned by various kinds of gate modulation3,4. Recent experiments have demonstrated that it is possible to obtain two-dimensional ferromagnetic order in insulating Cr2Ge2Te6 (ref. 5) and CrI3 (ref. 6) at low temperatures. Here we develop a device fabrication technique and isolate monolayers from the layered metallic magnet Fe3GeTe2 to study magnetotransport. We find that the itinerant ferromagnetism persists in Fe3GeTe2 down to the monolayer with an out-of-plane magnetocrystalline anisotropy. The ferromagnetic transition temperature, Tc, is suppressed relative to the bulk Tc of 205 kelvin in pristine Fe3GeTe2 thin flakes. An ionic gate, however, raises Tc to room temperature, much higher than the bulk Tc. The gate-tunable room-temperature ferromagnetism in two-dimensional Fe3GeTe2 opens up opportunities for potential voltage-controlled magnetoelectronics7-11 based on atomically thin van der Waals crystals.

Gate-tunable Room-temperature Ferromagnetism in Two-dimensional Fe 3 GeTe 2

The large variety of 2D materials and their co-integration in van der Waals heterostructures enable innovative device engineering. In addition, their atomically thin nature promotes the design of artificial materials by proximity effects that originate from short-range interactions. Such a designer approach is particularly compelling for spintronics, which typically harnesses functionalities from thin layers of magnetic and non-magnetic materials and the interfaces between them. Here we provide an overview of recent progress in 2D spintronics and opto-spintronics using van der Waals heterostructures. After an introduction to the forefront of spin transport research, we highlight the unique spin-related phenomena arising from spin–orbit and magnetic proximity effects. We further describe the ability to create multifunctional hybrid heterostructures based on van der Waals materials, combining spin, valley and excitonic degrees of freedom. We end with an outlook on perspectives and challenges for the design and production of ultracompact all-2D spin devices and their potential applications in conventional and quantum technologies. The preparation of a diverse set of 2D materials and their co-integration in van der Waals heterostructures enable innovative material design and device engineering. This Review summarizes recent advances in 2D spintronics and opto-spintronics, the underlying physical concepts and future perspectives of the field.

Van der Waals heterostructures for spintronics and opto-spintronics.

Magnetism in two-dimensional (2D) van der Waals (vdW) materials has recently emerged as one of the most promising areas in condensed matter research, with many exciting emerging properties and significant potential for applications ranging from topological magnonics to low-power spintronics, quantum computing, and optical communications. In the brief time after their discovery, 2D magnets have blossomed into a rich area for investigation, where fundamental concepts in magnetism are challenged by the behavior of spins that can develop at the single layer limit. However, much effort is still needed in multiple fronts before 2D magnets can be routinely used for practical implementations. In this comprehensive review, prominent authors with expertise in complementary fields of 2D magnetism (i.e., synthesis, device engineering, magneto-optics, imaging, transport, mechanics, spin excitations, and theory and simulations) have joined together to provide a genome of current knowledge and a guideline for future developments in 2D magnetic materials research.

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The Magnetic Genome of Two-Dimensional van der Waals Materials

Recently, layered two-dimensional ferromagnetic materials (2D FMs) have attracted a great deal of interest for developing low-dimensional magnetic and spintronic devices. Mechanically exfoliated 2D FMs were discovered to possess ferromagnetism down to monolayer. It is therefore of great importance to investigate the distinct magnetic properties at low dimensionality. Here, we report the wafer-scale growth of 2D ferromagnetic thin films of Fe3GeTe2 via molecular beam epitaxy, and their exotic magnetic properties can be manipulated via the Fe composition and the interface coupling with antiferromagnetic MnTe. A 2D layer-by-layer growth mode has been achieved by in situ reflection high-energy electron diffraction oscillations, yielding a well-defined interlayer distance of 0.82 nm along {002} surface. The magnetic easy axis is oriented along c-axis with a Curie temperature of 216.4 K. Remarkably, the Curie temperature can be enhanced when raising the Fe composition. Upon coupling with MnTe, the coercive field dramatically increases 50% from 0.65 to 0.94 Tesla. The large-scale layer-by-layer growth and controllable magnetic properties make Fe3GeTe2 a promising candidate for spintronic applications. It also opens up unprecedented opportunities to explore rich physics when coupled with other 2D superconductors and topological matters.2D synthesis: molecular beam epitaxy enables growth of ferromagnetic Fe 3 GeTe 2Molecular beam epitaxy enables wafer-scale growth of Fe3GeTe2, an atomically thin ferromagnetic compound. A team led by Faxian Xiu at Fudan University demonstrated layer-by-layer growth of large-area, 8 nm-thick films of Fe3GeTe2 on sapphire and GaAs substrates in a high-vacuum molecular beam epitaxy system. The measured Curie temperature of 216.4 K was found to vary systematically with the Fe composition, indicating that Fe doping is a viable route to achieving tailored ferromagnetic ternary compounds with tunable Curie temperature. Furthermore, upon coupling Fe3GeTe2 with antiferromagnetic MnTe, the magnetic properties of the former could be enhanced owing to the exchange interaction from the ferromagnetic/antiferromagnetic superlattice interface. As a result, the coercive field increased by 50% with respect to bare Fe3GeTe2. These results highlight that Fe3GeTe2 and its heterostructures are promising candidates for spintronic devices.

Wafer-scale Two-dimensional Ferromagnetic Fe 3 GeTe 2 Thin Films Grown by Molecular Beam Epitaxy

Inducing long-range magnetic order in three-dimensional topological insulators can gap the Diraclike metallic surface states, leading to exotic new phases such as the quantum anomalous Hall effect or the axion insulator state. These magnetic topological phases can host robust, dissipationless charge and spin currents or unique magnetoelectric behavior, which can be exploited in low-energy electronics and spintronics applications. Although several different strategies have been successfully implemented to realize these states, to date these phenomena have been confined to temperatures below a few Kelvin. In this review, we focus on one strategy, inducing magnetic order in topological insulators by proximity of magnetic materials, which has the capability for room temperature operation, unlocking the potential of magnetic topological phases for applications. We discuss the unique advantages of this strategy, the important physical mechanisms facilitating magnetic proximity effect, and the recent progress to achieve, understand, and harness proximity-coupled magnetic order in topological insulators. We also highlight some emerging new phenomena and applications enabled by proximity coupling of magnetism and topological materials, such as skyrmions and the topological Hall effect, and we conclude with an outlook on remaining challenges and opportunities in the field.

Recent Progress in Proximity Coupling of Magnetism to Topological Insulators.

The emerging two-dimensional ferromagnetic materials present atomic layer thickness and a perfect interface feature, which have become an attractive research direction in the field of spintronics f...

Above Room-Temperature Ferromagnetism in Wafer-Scale Two-Dimensional van der Waals Fe3GeTe2 Tailored by a Topological Insulator.

Rare-earth transition-metal ferrimagnetic materials are promising candidates for next-generation spintronic devices owing to their small magnetic moments and fast dynamics. However, only a few studies have been conducted thus far on the transport properties of noncollinear ferrimagnetic spin textures. In this study, we investigate the transverse and longitudinal resistances in a ferrimagnet/heavy-metal heterostructure composed of Co-Gd and Pt. The transition-metal sublattice arrangement and magnetic field--temperature phase diagram are obtained based on unconventional hysteresis loops observed near the compensation point. In the collinear regime, the spin Hall magnetoresistance (SMR) and anisotropic magnetoresistance (AMR) exhibit normal oscillation curves. In the noncollinear regime, the SMR and AMR signals are inverted for the existence of a 90\ifmmode^\circ\else\textdegree\fi{} phase shift between magnetization and magnetic fields. Owing to the conical spin textures in the spin-flop state, sharp peaks emerge when the field is perpendicular to the film plane. The abnormal magnetoresistance in our results can be used to analyze complex magnetic structures, which plays an important role in the all-electrical readout of noncollinear spintronics devices. 

Noncollinear spin state and unusual magnetoresistance in ferrimagnet Co-Gd

The emergent two-dimensional (2D) ferromagnetic materials with unique magnetic properties have endowed great potential for next-generation spintronic devices with extraordinary merits of high flexibility, easy controllability, and high heretointegrability, which is expected to promote the development of Moore's Law continuously. However, it is extremely challenging to realize magnetic switching with ultra-low power consumption at room temperature. Here, we demonstrate the room-temperature spin-orbit torque (SOT) driven magnetization switching in a well-epitaxial all-van der Waals (vdW) heterostructure. The topological insulator Bi2Te3 not only helps to elevate the Curie temperature of Fe3GeTe2 (FGT) through interfacial exchange coupling but also works as a spin current source allowing to switch FGT at a low current density of 2.2 * 106 A cm2. A large SOT efficiency of 0.7 is measured at room temperature, and the thickness of FGT is further adjusted to reduce the influence of the thermal contribution on the second-harmonic signal. Furthermore, the temperature and thickness-dependent SOT efficiency prove that the large SOT in our system mainly originates from the nontrivial origin of topological materials. Our experiment has enabled an all-vdW SOT structure and lays a solid foundation for the implementation of room-temperature all-vdW spintronic devices in the future.

Dongdong Chen

Papers

Above Room-Temperature Ferromagnetism in Wafer-Scale Two-Dimensional van der Waals Fe3GeTe2 Tailored by a Topological Insulator.

Noncollinear spin state and unusual magnetoresistance in ferrimagnet Co-Gd

Room temperature energy-efficient spin-orbit torque switching in wafer-scale all-vdW heterostructure