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Dragan Indjin

Researcher at University of Leeds

Publications -  227
Citations -  3231

Dragan Indjin is an academic researcher from University of Leeds. The author has contributed to research in topics: Terahertz radiation & Laser. The author has an hindex of 29, co-authored 220 publications receiving 2939 citations. Previous affiliations of Dragan Indjin include White Rose University Consortium & University of Belgrade Faculty of Electrical Engineering.

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Terahertz imaging through self-mixing in a quantum cascade laser

TL;DR: Self-mixing imaging offers high sensitivity, a potentially fast response, and a simple, compact optical design, and it is shown that it can be used to obtain high-resolution reflection images of exemplar structures.
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Terahertz imaging using quantum cascade lasers—a review of systems and applications

TL;DR: The terahertz (THz) frequency quantum cascade laser (QCL) is a compact source of THz radiation offering high power, high spectral purity and moderate tunability as discussed by the authors.
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Self-consistent scattering theory of transport and output characteristics of quantum cascade lasers

TL;DR: In this article, Sirtori et al. calculated the modal gain versus total current density dependencies and extracted the output characteristics, in particular the gain coefficient and threshold current, for the original GaAs/Al0.33Ga0.67As quantum cascade structure.
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Swept-frequency feedback interferometry using terahertz frequency QCLs: a method for imaging and materials analysis

TL;DR: This work exploits the remarkable phase-stability of THz QCLs to create a coherent swept-frequency delayed self-homodyning method for both imaging and materials analysis, using laser feedback interferometry, and demonstrates that this coherent detection method enables extraction of complex refractive indices with high accuracy.
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Simulation and design of GaN/AlGaN far-infrared (λ∼34 μm) quantum-cascade laser

TL;DR: In this article, the design of GaN/AlGaN quantum-cascade laser emitting at 34 and 38 μm (ΔE∼36 and 34 meV) is presented, assuming either a- or c-plane crystal growth orientation.