E. Castán

TL;DR: In this article, the electrical properties and bonding characteristics of SiNx:H thin films were analyzed by the electron cyclotron resonance plasma method, and it was shown that the N-H bonds located at the insulator/semiconductor interface act as a precursor site to the defect generation of the type. Si=Si-3, i.e., the P-bN0 centers.

TL;DR: In this article, room temperature conductance transients in the SiNx:H/Si interface were reported and explained in terms of a disorder-induced gap-state continuum model for the interfacial defects.

TL;DR: In this paper, the authors used the capacitance-voltage transient technique (CVTT) to study the variations of the deep-level properties along the space-charge region of the junctions.

TL;DR: In this article, the authors obtained Al/SiNx:H/InP metal-insulator-semiconductor devices by the electron cyclotron resonance plasma method at 200 °C and analyzed the electrical properties of the structures according to capacitance-voltage and deep level transient spectroscopy measurements.

TL;DR: In this article, the authors proposed a modification of the Nicollian-Goetzberger conductance technique for interface state density measurement in MOS structures, which relies on the measurement of the MOS structure conductance as a function of temperature, at a constant frequency.