E
E. H. Conrad
Researcher at Georgia Institute of Technology
Publications - 45
Citations - 3690
E. H. Conrad is an academic researcher from Georgia Institute of Technology. The author has contributed to research in topics: Graphene & Graphene nanoribbons. The author has an hindex of 20, co-authored 45 publications receiving 3456 citations.
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Journal ArticleDOI
The growth and morphology of epitaxial multilayer graphene
TL;DR: In this paper, the authors focus on the current state of epitaxial graphene research as it relates to the structure of graphene grown on SiC and pay particular attention to the similarity and differences between graphene growth on the two polar faces, (0001) and, of hexagonal SiC.
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Why multilayer graphene on 4H-SiC(0001[over ]) behaves like a single sheet of graphene.
J. Hass,F. Varchon,J. E. Millán-Otoya,Mike Sprinkle,Nikhil Sharma,W. A. de Heer,Claire Berger,Claire Berger,P. N. First,Laurence Magaud,E. H. Conrad +10 more
TL;DR: It is shown experimentally that multilayer graphene grown on the carbon terminated SiC(0001[over ]) surface contains rotational stacking faults related to the epitaxial condition at the graphene-SiC interface, and via first-principles calculation, that such faults produce an electronic structure indistinguishable from an isolated single graphene sheet in the vicinity of the Dirac point.
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Highly ordered graphene for two dimensional electronics
J. Hass,R. Feng,Tianbo Li,Xuebin Li,Z. Zong,W. A. de Heer,Phillip N. First,E. H. Conrad,C. A. Jeffrey,Claire Berger +9 more
TL;DR: In this paper, the authors showed that the SiC(0001¯) (C-terminated) surface of a semiconductor can have structural domain sizes more than three times larger than those on the Si face while reducing substrate disorder from sublimation by an order of magnitude.
Journal Article
First Direct Observation of a Nearly Ideal Graphene Band Structure
Mike Sprinkle,Yike Hu,Jeremy Hicks,Antonio Tejeda,Amina Taleb-Ibrahimi,P. Le F `{e}vre,François Bertran,Claire Berger,W. A. de Heer,E. H. Conrad +9 more
TL;DR: In this paper, the authors show that multilayer epitaxial graphene grown on the SiC(0001) surface is a new form of carbon that is composed of effectively isolated graphene sheets.
Journal ArticleDOI
Highly-ordered graphene for two dimensional electronics
J. Hass,C. A. Jeffrey,R. Feng,Tianbo Li,Xin Li,Zhimin Song,Claire Berger,W. A. de Heer,Phillip N. First,E. H. Conrad +9 more
TL;DR: In this paper, it was shown that Graphene grown from the SiC$(000\bar{1})$ (C-terminated) surface can have structural domain sizes more than three times larger than those grown on the Si-face while reducing substrate disorder from sublimation by an order of magnitude.