Phillip N. First

TL;DR: In this paper, a single epitaxial graphene layer at the silicon carbide interface is shown to reveal the Dirac nature of the charge carriers, and all-graphene electronically coherent devices and device architectures are envisaged.

TL;DR: In this paper, ultrathin epitaxial graphite films were grown by thermal decomposition on the (0001) surface of 6H−SiC, and characterized by surface science techniques.

TL;DR: It is shown that when graphene is epitaxially grown on SiC substrate, a gap of approximately 0.26 eV is produced and it is proposed that the origin of this gap is the breaking of sublattice symmetry owing to the graphene-substrate interaction.

TL;DR: Graphene multilayers are grown epitaxially on single crystal silicon carbide as discussed by the authors, which is composed of several graphene layers of which the first layer is electron doped due to the built-in electric field and the other layers are essentially undoped Unlike graphite the charge carriers show Dirac particle properties (i.e., an anomalous Berry's phase, weak anti-localization and square root field dependence of the Landau level energies).

TL;DR: It is shown that, when its source is atomic-scale lattice defects, wave functions of different symmetries can mix and reflect both intravalley and intervalley scattering.