R
R. Feng
Researcher at Georgia Institute of Technology
Publications - 15
Citations - 5158
R. Feng is an academic researcher from Georgia Institute of Technology. The author has contributed to research in topics: Graphene & Wetting layer. The author has an hindex of 10, co-authored 15 publications receiving 4834 citations.
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Journal ArticleDOI
Ultrathin epitaxial graphite: 2D electron gas properties and a route toward graphene-based nanoelectronics.
Claire Berger,Zhimin Song,Tianbo Li,Xuebin Li,Asmerom Ogbazghi,R. Feng,Zhenting Dai,Alexei Marchenkov,Edward H. Conrad,Phillip N. First,Walt A. de Heer +10 more
TL;DR: In this paper, ultrathin epitaxial graphite films were grown by thermal decomposition on the (0001) surface of 6H−SiC, and characterized by surface science techniques.
Journal ArticleDOI
Electronic structure of epitaxial graphene layers on SIC : Effect of the substrate
F. Varchon,R. Feng,J. Hass,Xuebin Li,B. Ngoc Nguyen,Cécile Naud,Pierre Mallet,Jean-Yves Veuillen,Claire Berger,Claire Berger,Edward H. Conrad,Laurence Magaud +11 more
TL;DR: In this article, a strong substrate-graphite bond is found in the first all-carbon layer by density functional theory calculations and x-ray diffraction for few graphene layers grown epitaxially on SiC.
Journal ArticleDOI
Highly ordered graphene for two dimensional electronics
J. Hass,R. Feng,Tianbo Li,Xuebin Li,Z. Zong,W. A. de Heer,Phillip N. First,E. H. Conrad,C. A. Jeffrey,Claire Berger +9 more
TL;DR: In this paper, the authors showed that the SiC(0001¯) (C-terminated) surface of a semiconductor can have structural domain sizes more than three times larger than those on the Si face while reducing substrate disorder from sublimation by an order of magnitude.
Journal ArticleDOI
Ultrathin epitaxial graphite: 2D electron gas properties and a route toward graphene-based nanoelectronics
Claire Berger,Zhimin Song,Tianbo Li,Xuebin Li,Asmerom Ogbazghi,R. Feng,Zhenting Dai,Alexei Marchenkov,Edward H. Conrad,Phillip N. First,Walt A. de Heer +10 more
TL;DR: In this article, an ultrathin epitaxial graphite graphite (NPEG) was grown by thermal decomposition on the (0001) surface of 6H-SiC and characterized by surface-science techniques.
Journal ArticleDOI
Highly-ordered graphene for two dimensional electronics
J. Hass,C. A. Jeffrey,R. Feng,Tianbo Li,Xin Li,Zhimin Song,Claire Berger,W. A. de Heer,Phillip N. First,E. H. Conrad +9 more
TL;DR: In this paper, it was shown that Graphene grown from the SiC$(000\bar{1})$ (C-terminated) surface can have structural domain sizes more than three times larger than those grown on the Si-face while reducing substrate disorder from sublimation by an order of magnitude.