E
E.M. Chumbes
Researcher at Cornell University
Publications - 15
Citations - 1564
E.M. Chumbes is an academic researcher from Cornell University. The author has contributed to research in topics: Epitaxy & Gallium nitride. The author has an hindex of 8, co-authored 13 publications receiving 1500 citations.
Papers
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Journal ArticleDOI
The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs
TL;DR: In this paper, the authors reported the highest reported microwave power density for undoped sapphire substrated AlGaN/GaN HEMT's on the same wafer.
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Undoped AlGaN/GaN HEMTs for microwave power amplification
L.F. Eastman,V. Tilak,Joseph A. Smart,B.M. Green,E.M. Chumbes,Roman Dimitrov,Hyungtak Kim,Oliver Ambacher,Nils Weimann,T. Prunty,M. J. Murphy,William J. Schaff,James R. Shealy +12 more
TL;DR: In this paper, a two-dimensional electron gas (2DEG) is induced using the strong spontaneous and piezoelectric polarization inherent in the AlGaN/GaN structures, and three-dimensional nonlinear thermal simulations are made to determine the temperature rise from heat dissipation in various geometries.
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AlGaN/GaN high electron mobility transistors on Si(111) substrates
E.M. Chumbes,A. T. Schremer,Joseph A. Smart,Y. Wang,Noel C. MacDonald,D. Hogue,J.J. Komiak,S.J. Lichwalla,Iii. R.E. Leoni,James R. Shealy +9 more
TL;DR: In this paper, the authors used organometallic vapor phase epitaxy (OMVPE) for the first time to realize high electron mobility transistors (HEMTs) on silicon substrates.
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Microwave performance of AlGaN/GaN metal insulator semiconductor field effect transistors on sapphire substrates
TL;DR: In this paper, metal-insulator-semiconductor field effect transistors (MISFETs) from surface-passivated undoped AlGaN/GaN heterostructures on sapphire were fabricated.
Journal ArticleDOI
Growth and passivation of AlGaN/GaN heterostructures
TL;DR: In this article, a simple polarization model is used to explain the Hall and capacitance-voltage data on AlGaN/GaN heterostructures grown by organometallic vapor phase epitaxy.