E
E. San Andrés
Researcher at Complutense University of Madrid
Publications - 65
Citations - 766
E. San Andrés is an academic researcher from Complutense University of Madrid. The author has contributed to research in topics: Thin film & Sputtering. The author has an hindex of 14, co-authored 60 publications receiving 712 citations. Previous affiliations of E. San Andrés include University of Valladolid.
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A comparative study of the electrical properties of TiO2 films grown by high-pressure reactive sputtering and atomic layer deposition
Salvador Dueñas,Helena Castán,Héctor García,E. San Andrés,Maria Toledano-Luque,Ignacio Mártil,Germán González-Díaz,Kaupo Kukli,Teet Uustare,Jaan Aarik +9 more
TL;DR: In this paper, the interfacial state and disordered-induced gap state densities of high pressure reactive sputtered (HPRS) TiO2 films annealed in O2 at temperatures ranging from 600 to 900 °C have been studied on silicon substrates.
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Rapid thermal annealing effects on the structural properties and density of defects in SiO2 and SiNx:H films deposited by electron cyclotron resonance
TL;DR: In this paper, the effect of thermal annealing on SiO2.0 and SiN1.55 films was studied using the electron cyclotron resonance (ECR) technique.
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Physical properties of high pressure reactively sputtered TiO2
E. San Andrés,Maria Toledano-Luque,A. del Prado,M. A. Navacerrada,Ignacio Mártil,Germán González-Díaz,Wolfgang Bohne,Jörg Röhrich,Erik Strub +8 more
TL;DR: In this article, a study of the physical properties of TiO2 thin films deposited at 200°C on Si by high pressure reactive sputtering, a nonconventional deposition method, is presented.
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Hafnium oxide thin films deposited by high pressure reactive sputtering in atmosphere formed with different Ar/O2 ratios
Maria Toledano-Luque,E. San Andrés,Javier Olea,A. del Prado,Ignacio Mártil,Wolfgang Bohne,Jörg Röhrich,Erik Strub +7 more
TL;DR: The physical and electrical properties of hafnium oxide (HfO2) thin films deposited by high pressure reactive sputtering (HPRS) have been studied as a function of the Ar/O-2 ratio in the sputtering gas mixture as discussed by the authors.
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High-pressure reactively sputtered HfO2: Composition, morphology, and optical properties
Maria Toledano-Luque,E. San Andrés,A. del Prado,Ignacio Mártil,M. L. Lucía,Germán González-Díaz,F. L. Martı́nez,Wolfgang Bohne,Jörg Röhrich,Erik Strub +9 more
TL;DR: In this paper, the growth rate of the HfO2 films depends on the deposition pressure (P) as P-1.75, which is explained by a diffusion model of the thermalized atoms in high-pressure sputtering.