K
K.P. O'Donnell
Researcher at University of Strathclyde
Publications - 246
Citations - 5557
K.P. O'Donnell is an academic researcher from University of Strathclyde. The author has contributed to research in topics: Photoluminescence & Cathodoluminescence. The author has an hindex of 38, co-authored 246 publications receiving 5339 citations. Previous affiliations of K.P. O'Donnell include Trinity College, Dublin & University of Cambridge.
Papers
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Journal ArticleDOI
Origin of Luminescence from InGaN Diodes
TL;DR: In this article, the first direct observation of phase decomposition in a luminescent alloy and show that this decomposition, allied with quantum confinement enhancements, accounts for the surprisingly high efficiency of InGaN-based diodes manufactured by Nichia Chemical Industries.
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Exciton localization and the Stokes’ shift in InGaN epilayers
TL;DR: In this paper, the authors report a comparative study of the emission and absorption spectra of a range of commercial InGaN light-emitting diodes and high-quality epilayers.
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Strain and composition distributions in wurtzite InGaN/GaN layers extracted from x-ray reciprocal space mapping
Sérgio Pereira,Maria R. Correia,Eduarda Pereira,K.P. O'Donnell,Eduardo Alves,A.D. Sequeira,N. Franco,Ian Watson,C. J. Deatcher +8 more
TL;DR: In this article, the authors used high-resolution reciprocal space mapping (RSM) to detect composition and strain gradients independently from the elongation of broadened reciprocal lattice points in asymmetric x-ray reflections.
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Compositional pulling effects in InxGa1-x N/GaN layers: A combined depth-resolved cathodoluminescence and Rutherford backscattering/channeling study
Sérgio Pereira,Maria R. Correia,Estela Pereira,K.P. O'Donnell,Carol Trager-Cowan,F. Sweeney,Eduardo Alves +6 more
TL;DR: In this paper, a depth-resolved study of the optical and structural properties of wurtzite InGaN/GaN bilayers grown by metallorganic chemical vapor deposition on sapphire substrates is reported.
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Origin of the Stokes shift : a geometrical model of exciton spectra in 2D semiconductors
TL;DR: A topographical theory of the exciton spectra is introduced which models such behavior in terms of statistical properties of a Gaussian random function.