The high density of heat generated in power electronics and optoelectronic devices is a critical bottleneck in their application. New materials with high thermal conductivity are needed to effectively dissipate heat and thereby enable enhanced performance of power controls, solid-state lighting, communication, and security systems. We report the experimental discovery of high thermal conductivity at room temperature in cubic boron arsenide (BAs) grown through a modified chemical vapor transport technique. The thermal conductivity of BAs, 1000 ± 90 watts per meter per kelvin meter-kelvin, is higher than that of silicon carbide by a factor of 3 and is surpassed only by diamond and the basal-plane value of graphite. This work shows that BAs represents a class of ultrahigh-thermal conductivity materials predicted by a recent theory, and that it may constitute a useful thermal management material for high-power density electronic devices.

https://science.sciencemag.org/content/sci/early/2018/07/03/science.aat8982.full.pdf

High thermal conductivity in cubic boron arsenide crystals.

Thermal conductivity and interfacial thermal conductance play crucial roles in the design of engineering systems where temperature and thermal stress are of concerns. To date, a variety of measurement techniques are available for both bulk and thin film solid-state materials with a broad temperature range. For thermal characterization of bulk material, the steady-state absolute method, laser flash diffusivity method, and transient plane source method are most used. For thin film measurement, the 3{\omega} method and transient thermoreflectance technique including both frequency-domain and time-domain analysis are employed widely. This work reviews several most commonly used measurement techniques. In general, it is a very challenging task to determine thermal conductivity and interface contact resistance with less than 5% error. Selecting a specific measurement technique to characterize thermal properties need to be based on: 1) knowledge on the sample whose thermophysical properties is to be determined, including the sample geometry and size, and preparation method; 2) understanding of fundamentals and procedures of the testing technique and equipment, for example, some techniques are limited to samples with specific geometrics and some are limited to specific range of thermophysical properties; 3) understanding of the potential error sources which might affect the final results, for example, the convection and radiation heat losses.

Measurement Techniques for Thermal Conductivity and Interfacial Thermal Conductance of Bulk and Thin Film Materials

Conventional theory predicts that ultrahigh lattice thermal conductivity can only occur in crystals composed of strongly bonded light elements, and that it is limited by anharmonic three-phonon processes. We report experimental evidence that departs from these long-held criteria. We measured a local room-temperature thermal conductivity exceeding 1000 watts per meter-kelvin and an average bulk value reaching 900 watts per meter-kelvin in bulk boron arsenide (BAs) crystals, where boron and arsenic are light and heavy elements, respectively. The high values are consistent with a proposal for phonon-band engineering and can only be explained by higher-order phonon processes. These findings yield insight into the physics of heat conduction in solids and show BAs to be the only known semiconductor with ultrahigh thermal conductivity.

http://science.sciencemag.org/content/sci/361/6402/582.full.pdf

Unusual high thermal conductivity in boron arsenide bulk crystals

The thermal conductivity of 3D samples is usually intensive However, this holds only when phonon transport is diffusive and the sample is sufficiently large In this review, a framework is presented that shows how phonon scattering in 2D materials influences thermal transport properties that depend on geometry, substrate and interlayer coupling, and imperfections These considerations suggest ways of enabling new thermoelectric materials, thermal conductors or insulators, and perhaps even phononic computing devices

https://link.aps.org/accepted/10.1103/RevModPhys.90.041002

Colloquium: Phononic thermal properties of two-dimensional materials

We derive a generally applicable formula to calculate the precision of multi-parameter measurements that apply least squares algorithms. This formula, which accounts for experimental noise and uncertainty in the controlled model parameters, is then used to analyze the uncertainty of thermal property measurements with pump-probe thermoreflectance techniques. We compare the uncertainty of time domain thermoreflectance and frequency domain thermoreflectance (FDTR) when measuring bulk materials and thin films, considering simultaneous measurements of various combinations of thermal properties, including thermal conductivity, heat capacity, and thermal boundary conductance. We validate the uncertainty analysis using Monte Carlo simulations on data from FDTR measurements of an 80 nm gold film on fused silica.

Uncertainty analysis of thermoreflectance measurements.

Suspended graphene has the highest measured thermal conductivity of any material at room temperature. However, when graphene is supported by a substrate or encased between two materials, basal-plane heat transfer is suppressed by phonon interactions at the interfaces. We have used frequency domain thermoreflectance to create thermal conductance maps of graphene contacts, obtaining simultaneous measurements of the basal-plane thermal conductivity and cross-plane thermal boundary conductance for 1–7 graphitic layers encased between titanium and silicon dioxide. We find that the basal-plane thermal conductivity is similar to that of graphene supported on silicon dioxide. Our results have implications for heat transfer in two-dimensional material systems, and are relevant for applications such as graphene transistors and other nanoelectronic devices.

Thermal conductance imaging of graphene contacts

As the size of gallium nitride (GaN) transistors is reduced in order to reach higher operating frequencies, heat dissipation becomes the critical bottleneck in device performance and longevity. Despite the importance of characterizing the physics governing the thermal transport in thin GaN films, the literature is far from conclusive. In this letter, we report measurements of thermal conductivity in a GaN film with thickness ranging from 15–1000 nm grown on 4H-SiC without a transition layer. Additionally, we measure the thermal conductivity in the GaN film when it is 1 μm-thick in the temperature range of 300  < T< 600 K and use a phonon transport model to explain the thermal conductivity in this film.

Thickness dependent thermal conductivity of gallium nitride

Silicon carbide is used as a substrate for high-power GaN devices because of its closely matched lattice spacing with GaN and its high thermal conductivity. In these devices, thermal resistance at the GaN–SiC interface is a bottleneck to heat flow, making this property an important factor in device design. In this letter, we report the first measurements of the thermal boundary conductance of epitaxial GaN grown directly on SiC without a transition layer. We find that the thermal boundary conductance increases from approximately 230 MW/m2K at 300 K to 330 MW/m2K at 600 K. Our measured values are in good qualitative agreement with the diffuse mismatch model for thermal boundary conductance and are in good quantitative agreement when we include a correction factor based on the ratio of Debye temperatures of the two materials. We also report the thermal conductivity of the GaN film, the thermal conductivity of 4H-SiC, and the thermal boundary conductance between Ni and GaN.

Thermal transport through GaN–SiC interfaces from 300 to 600 K

Optical pump-probe techniques based on thermoreflectance, such as time domain thermoreflectance and frequency domain thermoreflectance (FDTR), have been widely used to characterize the thermal conductivity of thin films and the thermal conductance across interfaces. These techniques typically use a transducer layer to absorb the pump light and improve the thermoreflectance signal. The transducer, however, complicates the interpretation of the measured signal because the approximation that all the energy from the pump beam is deposited at the transducer surface is not always accurate. In this paper, we consider the effect of laser absorption in the top layer of a multilayer sample, and derive an analytical solution for the thermoreflectance signal in the diffusion regime based on volumetric heating. We analyze the measurement sensitivity to the pump absorption depth for transducers with different thermal conductivities, and investigate the additional effect of probe laser penetration depth on the measured signal. We validate our model using FDTR measurements on 490 nm thick amorphous silicon films deposited on fused silica and silicon substrates.

Elbara Ziade

Papers

Uncertainty analysis of thermoreflectance measurements.

Thermal conductance imaging of graphene contacts

Thickness dependent thermal conductivity of gallium nitride

Thermal transport through GaN–SiC interfaces from 300 to 600 K

Modeling optical absorption for thermoreflectance measurements