Elena O. Filatova

TL;DR: In this article, the valence and conduction bands of am- and γ-Al2O3 films grown by the atomic layer deposition technique were studied simultaneously in identical experimental conditions using high-resolution near-edge X-ray absorption fine structure and soft x-ray photoelectron spectroscopy.

TL;DR: In this paper, the authors investigated changes in crystal and electronic structure of NCM811 (80% Ni) cathode materials at high states of charge by a combination of operando X-ray diffraction (XRD), operando hard Xray absorption spectroscopy (hXAS), ex situ soft x-ray absorption spectrum analyzer (sXAS) and density functional theory (DFT) calculations and correlate the results with data from galvanostatic cycling in coin cells.

TL;DR: In this article, the Kramers-Kronig analysis in the continuous spectral region including, O K and Si K absorption edges from the reflection spectra measured using synchrotron radiation was carried out.

TL;DR: In this paper, the growth of SnSe structures by the ALD method using Et4Sn and H2Se as precursors has been investigated and it was established that coverage occurs at a temperature above 250 °C and the morphology of the layer depends on the temperature.

TL;DR: Investigation of the TiN electrode reveals the predominantly “stretched” octahedra in its structure with the preferential orientation relative the interface with γ-Al2O3 relative to the X-ray absorption in the plane parallel to the surface, which can be correlated with ≈200 meV electron barrier height increase at the O-deficient TiN/γ-Al 2O3 interface.