V
Valery V. Afanas'ev
Researcher at Katholieke Universiteit Leuven
Publications - 169
Citations - 4199
Valery V. Afanas'ev is an academic researcher from Katholieke Universiteit Leuven. The author has contributed to research in topics: Band gap & Electron paramagnetic resonance. The author has an hindex of 32, co-authored 169 publications receiving 3782 citations.
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Journal ArticleDOI
Strain-induced semiconductor to metal transition in the two-dimensional honeycomb structure of MoS2
Emilio Scalise,Michel Houssa,Geoffrey Pourtois,Geoffrey Pourtois,Valery V. Afanas'ev,Andre Stesmans +5 more
TL;DR: In this article, the electronic properties of two-dimensional honeycomb structures of molybdenum disulfide (MoS2) subjected to biaxial strain have been investigated using first-principles calculations based on density functional theory.
Journal ArticleDOI
High-k dielectrics for future generation memory devices (Invited Paper)
Jorge A. Kittl,Karl Opsomer,Mihaela Popovici,Nicolas Menou,Ben Kaczer,X.P. Wang,Christoph Adelmann,M. A. Pawlak,K. Tomida,Aude Rothschild,Bogdan Govoreanu,Robin Degraeve,Marc Schaekers,Mohammed Zahid,Annelies Delabie,Johan Meersschaut,Wouter Polspoel,Sergiu Clima,Geoffrey Pourtois,Werner Knaepen,Christophe Detavernier,Valery V. Afanas'ev,Tom E. Blomberg,Dieter Pierreux,J. Swerts,P. Fischer,J. W. Maes,D. Manger,Wilfried Vandervorst,Thierry Conard,Alexis Franquet,Paola Favia,Hugo Bender,Bert Brijs,S. Van Elshocht,Malgorzata Jurczak,J. Van Houdt,Dirk Wouters +37 more
TL;DR: The requirements and development of high-k dielectric films for application in storage cells of future generation flash and dynamic random access memory (DRAM) devices are reviewed in this article.
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Mechanisms responsible for improvement of 4H-SiC/SiO2 interface properties by nitridation
Valery V. Afanas'ev,Andre Stesmans,Florin Ciobanu,Gerhard Pensl,Kuan Yew Cheong,Sima Dimitrijev +5 more
TL;DR: In this article, an analysis of fast and slow traps at the interface of 4H-SiC with oxides grown in O2, N2O, and NO showed that the dominant positive effect of nitridation is due to a significant reduction of the slow trap density.
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Vibrational properties of silicene and germanene
Emilio Scalise,Michel Houssa,Geoffrey Pourtois,Geoffrey Pourtois,B. van den Broek,Valery V. Afanas'ev,Andre Stesmans +6 more
TL;DR: The structural and vibrational properties of two-dimensional hexagonal silicon (silicene) and germanium (germanene) are investigated by means of first-principles calculations as mentioned in this paper.
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Electronic properties of two-dimensional hexagonal germanium
TL;DR: In this paper, the electronic properties of two-dimensional hexagonal germanium, so called germanene, are investigated using first-principles simulations, and it is found that biaxial compressively strained Germanene is a gapless semiconductor with linear energy dispersions near the K points.