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Enakshi Bhattacharya

Researcher at Indian Institute of Technology Madras

Publications -  83
Citations -  939

Enakshi Bhattacharya is an academic researcher from Indian Institute of Technology Madras. The author has contributed to research in topics: Silicon & Surface micromachining. The author has an hindex of 14, co-authored 80 publications receiving 873 citations. Previous affiliations of Enakshi Bhattacharya include Indian Institutes of Technology & Tata Institute of Fundamental Research.

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Proceedings ArticleDOI

Detection of Urea and Ammonia with Aluminium Coated Polysilicon Nanoresonators

TL;DR: In this article, the etching characteristic of Al by the ammonium hydroxide from urea hydrolysis in the presence of urease was used to estimate the urea concentration.
Journal ArticleDOI

Conductivity of amorphous hydrogenated silicon in the planar and sandwich configurations

TL;DR: In this article, the temperature dependence of the conductivity of amorphous hydrogenated silicon in planar and sandwich configurations under identical conditions is measured, and it is shown that the conductivities for the two configurations compare favourably.
Proceedings ArticleDOI

Simple measurement technique for resonance frequency of micromachined cantilevers

TL;DR: In this paper, a simple electrical measurement technique to determine resonance frequency of surface diameters of polysilicon beams was discussed. But the measurement was done on oxide anchored diamagnetic diameters and the results were compared with Doppler Vibrometry results.
Proceedings ArticleDOI

Functionalized Silicon Nanoporous Membranes for Efficient Dialysis

TL;DR: The SNM appears to be a promising candidate for dialysis and was found to be the most effective method for preventing binding of urea on the SNM surface following acid treatment.
Proceedings ArticleDOI

Electrical measurement of undercut in surface micromachined structures

TL;DR: In this paper, the Young's modulus (E) of a surface micromachined cantilever is measured on the released beams resonance frequency (fi) measurements, where the ratio between measured frequencies for two widths is used to obtain undercut.