E
Enrico Napolitani
Researcher at University of Padua
Publications - 241
Citations - 3598
Enrico Napolitani is an academic researcher from University of Padua. The author has contributed to research in topics: Ion implantation & Silicon. The author has an hindex of 31, co-authored 225 publications receiving 3312 citations. Previous affiliations of Enrico Napolitani include Istituto Nazionale di Fisica Nucleare.
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Cerium based chemical conversion coating on AZ63 magnesium alloy
TL;DR: In this article, a CeCl 3 /H 2 O 2 aqueous solution treatment is assessed for the formation of conversion coatings on a AZ63 magnesium alloy, which appears to consist of a thin and cracked coating with large agglomerates over cathodic intermetallic particles.
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Mechanisms of boron diffusion in silicon and germanium
TL;DR: In this article, the authors reviewed a large amount of experimental work and present their current understanding of the B diffusion mechanism, disentangling concomitant effects and describing the underlying physics.
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Strain relaxation in graded composition InxGa1−xAs/GaAs buffer layers
Filippo Romanato,Enrico Napolitani,Alberto Carnera,A. V. Drigo,L. Lazzarini,Giancarlo Salviati,C. Ferrari,A. Bosacchi,S. Franchi +8 more
TL;DR: In this article, a model to compute the strain relaxation rate in InxGa1−xAs/GaAs single layers has been tested on several compositionally graded buffer layers.
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Tunability of the dielectric function of heavily doped germanium thin films for mid-infrared plasmonics
Jacopo Frigerio,Andrea Ballabio,Giovanni Isella,Emilie Sakat,Giovanni Pellegrini,Paolo Biagioni,Monica Bollani,Enrico Napolitani,C. L. Manganelli,Michele Virgilio,Alexander Grupp,Marco P. Fischer,Daniele Brida,Kevin Gallacher,Douglas J. Paul,Leonetta Baldassarre,Paolo Calvani,Valeria Giliberti,A. Nucara,Michele Ortolani +19 more
TL;DR: In this paper, the authors analyzed the relevant case of heavily doped Ge films by combining transport measurements with infrared spectroscopy, and demonstrated a broad tunability of the screened plasma frequency up to the mid-infrared range.
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Interaction between self-interstitials and substitutional C in silicon: Interstitial trapping and C clustering mechanism
Salvatore Mirabella,A. Coati,D. De Salvador,Enrico Napolitani,Alessandro Mattoni,Gabriele Bisognin,Marina Berti,Alberto Carnera,A. V. Drigo,Silvia Scalese,S. Pulvirenti,Antonio Terrasi,Francesco Priolo +12 more
TL;DR: In this paper, the interaction between self-interstitials, produced by 20-keV silicon implantation, and substitutional carbon in silicon have been studied using a layer grown by molecular beam epitaxy (MBE) and interposed between the near-surface self-stitial source and a deeper B spike used as a marker for the Si-interstitial concentration.