Michele Virgilio

TL;DR: In this paper, the authors integrate gate-defined quantum dots and superconductivity into germanium heterostructures and demonstrate electric gate-control of the supercurrent in a quantum well.

TL;DR: The mechanical and optical properties of tensile strained Ge microstructures directly fabricated in a state-of-the art complementary metal-oxide-semiconductor fabrication line can be realistically applied to the fabrication of a prototype platform for monolithic integration of near infrared laser sources for silicon photonics.

TL;DR: In this paper, a 2D hole gas of high mobility (5 × 105 cm2 V−1 s−1) is demonstrated in a very shallow strained germanium (Ge) channel, which is located only 22 nm below the surface.

TL;DR: In this paper, the authors analyzed the relevant case of heavily doped Ge films by combining transport measurements with infrared spectroscopy, and demonstrated a broad tunability of the screened plasma frequency up to the mid-infrared range.

TL;DR: In this article, the authors calculate band-to-band radiative transition rate spectra in pure Ge as functions of applied tensile strain, heavy doping, charge injection density, and temperature and conclude that, despite the free carrier losses, net gain values as high as 6000 cm(-1) are achievable for doping density and strain values reported in the literature.