Showing papers by "Eric Tournié published in 2016"

Metamorphic III-V semiconductor lasers grown on silicon

Abstract: The epitaxial integration of III–V optoelectronic devices on silicon will be the enabling technology for full-scale deployment of silicon photonics and the key to improving communication systems. Silicon photonics also offer new opportunities for the realization of ultracompact and fully integrated sensing systems operating in the mid-infrared (MIR) regime of the spectrum. In this article, we review recent developments, through several approaches, in the direct metamorphic epitaxial growth of various III–V materials-based lasers on silicon substrates. We show that GaAs-based 1.3-μm III–V quantum dot lasers and GaSb-based MIR quantum-well lasers grown on silicon substrates can operate with low threshold current density and high operating temperature, which hold promise for the future.

Localized surface plasmon resonance frequency tuning in highly doped InAsSb/GaSb one-dimensional nanostructures

Abstract: We report a detailed analysis of the influence of the doping level and nanoribbon width on the localized surface plasmon resonance (LSPR) by means of reflectance measurements. The plasmonic system, based on one-dimensional periodic gratings of highly Si-doped InAsSb/GaSb semiconductor nanostructures, is fabricated by a simple, accurate and large-area technique fabrication. Increasing the doping level blueshifts the resonance peak while increasing the ribbon width results in a redshift, as confirmed by numerical simulations. This provides an efficient means of fine-tuning the LSPR properties to a target purpose of between 8–20 μm (1250−500 cm−1). Finally, we show surface plasmon resonance sensing to absorbing polymer layers. We address values of the quality factor, sensitivity and figure of merit of 16 700 nm RIU–1 and 2.5, respectively. These results demonstrate Si-doped InAsSb/GaSb to be a low-loss/high sensitive material making it very promising for the development of biosensing devices in the mid-infrared.

GaSb lasers grown on Silicon substrate emitting in the telecom wavelength range

Abstract: We report the first GaSb-based laser monolithically grown on Silicon substrate working in CW mode at room temperature with an emission in the telecom wavelength range. We will present the laser design, Silicon ex-situ preparation, technology process and electro-optics characterization. Broad-area laser diodes exhibit threshold-current densities 700 A/cm2. 10 µm × 1 mm diodes operate up to above 35 °C under continuous wave operation with an emission wavelength at 1.59 µm.

3.8 um heterogeneously integrated III-V on silicon micro-spectrometer

Abstract: Anton VASILIEV1,2*, Muhammad MUNEEB1,2,3, Alfonso RUOCCO1,2, Aditya MALIK1,2, Hongtao CHEN1,2, Milos NEDELJKOVIC4, Jordi SOLER-PENADES4, Laurent CERUTTI5, Jean-Baptiste RODRIGUEZ5, Goran MASHANOVICH4, Meint SMIT3, Eric TOURNIE5 and Günther ROELKENS1,2,3 1Photonics Research roup, hent University-imec, Sint-Pietersnieuwstraat 41, 9000 hent, Belgium 2Center for Nanoand Biophotonics, hent University, Belgium 3COBRA Research Institute, Eindhoven University of Technology, Eindhoven 5600 MB, Netherlands. 4Optoelectronics Research Center, Faculty of Physical Sciences and Engineering, University of Southampton, Southampton, UK 5Université de Montpellier, IES, UMR 5214, F-34000 Montpellier, France and CNRS, IES, UMR 5214, F-34000 Montpellier, France * Anton.Vasiliev@Uent.be

First orientation-patterned GaSb ridge waveguides fabrication and preliminary characterization for frequency conversion in the mid-infrared

Abstract: We report the first realization of low-loss orientation-patterned gallium antimonide waveguides for frequency conversion in the mid-infrared. Planar waveguide structures were grown by molecular-beam epitaxy on periodically patterned gallium arsenide templates prepared by wafer bonding. Ridge waveguides were designed and fabricated from the planar structures. Record losses of 0.73 dB/cm in periodically oriented waveguides were measured at 2 μm.