Recent progress in the synthesis of graphene and derived materials for next generation electrodes of high performance lithium ion batteries

Two dimensional (2D) MXene decorated by the SnO2 nanoparticles has been successfully synthesized by the hydrothermal method. The formed MXene/SnO2 heterojunction based chemirestistive-type sensors exhibit an excellent sensitivity and selectivity to different concentrations of NH3 from 0.5 to 100 ppm at room temperature. The enhanced sensing properties can be attributed to two major factors. On one hand, 2D MXene provides a matrix which has a unique, selective adsorption ability to ammonia and good conductivity that makes the room-temperature sensing of the heterojunction based sensor feasible. On the other hand, the difference in the Fermi level of the 2D MXene and SnO2 drives the charge transfer at the interface of the heterojunctions enriching the electrons on the surface region of SnO2 and consequently enhancing the sensitivity. Furthermore, a wireless sensor made from an inductor-capacitor (LC) antenna and the as-synthesized MXene/SnO2 heterojunctions fabricated by the low-temperature-cofired ceramic technique (LTCC) was preliminary investigated. The wireless sensor shows a even faster response/recovery speeds (

MXene/SnO2 heterojunction based chemical gas sensors

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Laser processing of graphene and related materials for energy storage: State of the art and future prospects

Two dimensional (2D) graphene and its derivatives modification with nanomaterials for formation of hybrid/nanocomposites undergo stimulus-induced optical and electrical changes which are important ...

Cutting edge development on graphene derivatives modified by liquid crystal and CdS/TiO2 hybrid matrix: optoelectronics and biotechnological aspects

Perovskite solar cells (PSCs) based on the regular n–i–p device architecture have reached above 25% certified efficiency with continuously reported improvements in recent years. A key common factor for these recent breakthroughs is the development of SnO2 as an effective electron transport layer in these devices. In this article, the key advances in SnO2 development are reviewed, including various deposition approaches and surface treatment strategies, to enhance the bulk and interface properties of SnO2 for highly efficient and stable n–i–p PSCs. In addition, the general materials chemistry associated with SnO2 along with the corresponding materials challenges and improvement strategies are discussed, focusing on defects, intrinsic properties, and impact on device characteristics. Finally, some SnO2 implementations related to scalable processes and flexible devices are highlighted, and perspectives on the future development of efficient and stable large‐scale perovskite solar modules are also provided.

Advances in SnO2 for Efficient and Stable n–i–p Perovskite Solar Cells

We report a new atomic layer deposition (ALD) process for yttrium oxide (Y2O3) thin films using tris(N,N′-diisopropyl-2-dimethylamido-guanidinato) yttrium(III) [Y(DPDMG)3] which possesses an optimal reactivity towards water that enabled the growth of high quality thin films Saturative behavior of the precursor and a constant growth rate of 11 A per cycle confirm the characteristic self-limiting ALD growth in a temperature range from 175 °C to 250 °C The polycrystalline films in the cubic phase are uniform and smooth with a root mean squared (RMS) roughness of 055 nm, while the O/Y ratio of 20 reveal oxygen rich layers with low carbon contaminations of around 2 at% Optical properties determined via UV/Vis measurements revealed the direct optical band gap of 556 eV The valuable intrinsic properties such as a high dielectric constant make Y2O3 a promising candidate in microelectronic applications Thus the electrical characteristics of the ALD grown layers embedded in a metal insulator semiconductor (MIS) capacitor structure were determined which resulted in a dielectric permittivity of 11, low leakage current density (≈10−7 A cm−2 at 2 MV cm−1) and high electrical breakdown fields (40–75 MV cm−1) These promising results demonstrate the potential of the new and simple Y2O3 ALD process for gate oxide applications

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Water assisted atomic layer deposition of yttrium oxide using tris(N,N′-diisopropyl-2-dimethylamido-guanidinato) yttrium(III): process development, film characterization and functional properties

A bottom-up process from precursor development for tin to plasma-enhanced atomic layer deposition (PEALD) for tin(IV) oxide and its successful implementation in a working thin-film transistor devic...

Low-Temperature Plasma-Enhanced Atomic Layer Deposition of Tin(IV) Oxide from a Functionalized Alkyl Precursor: Fabrication and Evaluation of SnO2-Based Thin-Film Transistor Devices.

A bottom-up approach starting with the development of new Hf precursors for plasma-enhanced atomic layer deposition (PEALD) processes for HfO2 followed by in situ thin-film surface characterization...

PEALD of HfO2 Thin Films: Precursor Tuning and a New Near-Ambient-Pressure XPS Approach to in Situ Examination of Thin-Film Surfaces Exposed to Reactive Gases.

Ersoy Subaşı

Papers

Water assisted atomic layer deposition of yttrium oxide using tris(N,N′-diisopropyl-2-dimethylamido-guanidinato) yttrium(III): process development, film characterization and functional properties

Low-Temperature Plasma-Enhanced Atomic Layer Deposition of Tin(IV) Oxide from a Functionalized Alkyl Precursor: Fabrication and Evaluation of SnO2-Based Thin-Film Transistor Devices.

PEALD of HfO2 Thin Films: Precursor Tuning and a New Near-Ambient-Pressure XPS Approach to in Situ Examination of Thin-Film Surfaces Exposed to Reactive Gases.

Femtosecond laser patterning of graphene electrodes for thin-film transistors