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Evan L. Schwartz

Researcher at Cornell University

Publications -  40
Citations -  961

Evan L. Schwartz is an academic researcher from Cornell University. The author has contributed to research in topics: Layer (electronics) & Photoresist. The author has an hindex of 17, co-authored 40 publications receiving 927 citations.

Papers
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Journal ArticleDOI

Reversible Morphology Control in Block Copolymer Films via Solvent Vapor Processing: An In Situ GISAXS study.

TL;DR: In situ studies indicate that self-assembly occurs spontaneously upon attaining the threshold swelling ratios, and shows that for self assembly to occur, the polymer thin film must surpass a swollen thickness ratio of 212% of its original thickness when swollen in THF vapors and a ratio of 268% for acetone vapor annealing.
Journal ArticleDOI

Control of self-assembly of lithographically patternable block copolymer films.

TL;DR: Poly(alpha-methylstyrene)-block-poly(4-hydroxystyrene) acts as both a lithographic deep UV photoresist and a self-assembling material, making it ideal for patterning simultaneously by both top-down and bottom-up fabrication methods.
Patent

Electronically switchable privacy film and display device having same

TL;DR: In this article, an electronically switchable privacy film was proposed for display devices, which consists of a pair of mutually opposing transparent electrodes, an optically transparent microstructured layer disposed between the transparent electrodes and a plurality of micro-structured ribs extending across a surface thereof.
Journal ArticleDOI

High refractive index and high transparency HfO2 nanocomposites for next generation lithography

TL;DR: In this article, the authors used HfO2 nanoparticles stabilized with selected ligands to obtain high refractive index and low absorbance under 193 nm radiation, and combined with an appropriate photopolymer were used as a nanocomposite photoresist.
Proceedings ArticleDOI

Development of an inorganic nanoparticle photoresist for EUV, e-beam, and 193nm lithography

TL;DR: In this article, a transparent, high refractive index inorganic photoresist with significantly higher etch resistance was developed, which was shown superior resolution with both E-beam and 193 nm lithography, producing sub-50 nm patterns.