Peng Xie

TL;DR: In this paper, a method of forming an etch mask on a substrate is provided that includes (1) forming a resist layer on the substrate, (2) exposing one or more regions of the resist layer to an energy source so as to alter at least one of a physical property and a chemical property of the exposed regions; (3) performing a hardening process on the resist surface to increase the etch resistance of the first regions of resist layer relative to second regions.

TL;DR: In this article, a transparent, high refractive index inorganic photoresist with significantly higher etch resistance was developed, which was shown superior resolution with both E-beam and 193 nm lithography, producing sub-50 nm patterns.

TL;DR: In this article, the authors developed new inorganic nanocomposite photoresists with significantly higher etch resistance than the usual polymer-based photoresist, which can provide several advantages to conventional chemically amplified resist(CAR) systems, including improved depth of focus (DOF) and reduced line edge roughness.

TL;DR: In this article, a photopatternable inorganic hardmask for 193 nm lithography based on the solution-deposited dielectric metal oxide sulfate (MSOx) system was presented.

TL;DR: In this article, a photoresist platform that uses both molecular weight switch and polarity switch was reported, which was achieved by using a poly(olefin sulfone) designed to undergo photo-induced chain scission, making the polymer soluble in aqueous base.