抗原变异可使得多种致病微生物易于逃避宿主免疫应答。表达在感染红细胞表面的恶性疟原虫红细胞表面蛋白1（PfPMP1）与感染红细胞、内皮细胞、树突状细胞以及胎盘的单个或多个受体作用，在黏附及免疫逃避中起关键的作用。每个单倍体基因组var基因家族编码约60种成员，通过启动转录不同的var基因变异体为抗原变异提供了分子基础。

疟原虫var基因转换速率变化导致抗原变异[英]／Paul H, Robert P, Christodoulou Z, et al//Proc Natl Acad Sci U S A

This review describes a new paradigm of electronics based on the spin degree of freedom of the electron. Either adding the spin degree of freedom to conventional charge-based electronic devices or using the spin alone has the potential advantages of nonvolatility, increased data processing speed, decreased electric power consumption, and increased integration densities compared with conventional semiconductor devices. To successfully incorporate spins into existing semiconductor technology, one has to resolve technical issues such as efficient injection, transport, control and manipulation, and detection of spin polarization as well as spin-polarized currents. Recent advances in new materials engineering hold the promise of realizing spintronic devices in the near future. We review the current state of the spin-based devices, efforts in new materials fabrication, issues in spin transport, and optical spin manipulation.

http://science.sciencemag.org/content/sci/294/5546/1488.full.pdf

Spintronics: a spin-based electronics vision for the future.

Spintronics, or spin electronics, involves the study of active control and manipulation of spin degrees of freedom in solid-state systems. This article reviews the current status of this subject, including both recent advances and well-established results. The primary focus is on the basic physical principles underlying the generation of carrier spin polarization, spin dynamics, and spin-polarized transport in semiconductors and metals. Spin transport differs from charge transport in that spin is a nonconserved quantity in solids due to spin-orbit and hyperfine coupling. The authors discuss in detail spin decoherence mechanisms in metals and semiconductors. Various theories of spin injection and spin-polarized transport are applied to hybrid structures relevant to spin-based devices and fundamental studies of materials properties. Experimental work is reviewed with the emphasis on projected applications, in which external electric and magnetic fields and illumination by light will be used to control spin and charge dynamics to create new functionalities not feasible or ineffective with conventional electronics.

/pdf/spintronics-fundamentals-and-applications-2dx38n6phu.pdf

Spintronics: Fundamentals and applications

We report a method to form multifunctional polymer coatings through simple dip-coating of objects in an aqueous solution of dopamine. Inspired by the composition of adhesive proteins in mussels, we used dopamine self-polymerization to form thin, surface-adherent polydopamine films onto a wide range of inorganic and organic materials, including noble metals, oxides, polymers, semiconductors, and ceramics. Secondary reactions can be used to create a variety of ad-layers, including self-assembled monolayers through deposition of long-chain molecular building blocks, metal films by electroless metallization, and bioinert and bioactive surfaces via grafting of macromolecules.

/pdf/mussel-inspired-surface-chemistry-for-multifunctional-1noq7vcby7.pdf

Mussel-Inspired Surface Chemistry for Multifunctional Coatings

Research on fluorescent semiconductor nanocrystals (also known as quantum dots or qdots) has evolved over the past two decades from electronic materials science to biological applications. We review current approaches to the synthesis, solubilization, and functionalization of qdots and their applications to cell and animal biology. Recent examples of their experimental use include the observation of diffusion of individual glycine receptors in living neurons and the identification of lymph nodes in live animals by near-infrared emission during surgery. The new generations of qdots have farreaching potential for the study of intracellular processes at the single-molecule level, high-resolution cellular imaging, long-term in vivo observation of cell trafficking, tumor targeting, and diagnostics.

/pdf/quantum-dots-for-live-cells-in-vivo-imaging-and-diagnostics-3y9ayecoh8.pdf

Quantum Dots for Live Cells, in Vivo Imaging, and Diagnostics

An unambiguous proof of lasing in an active nanocavity with ultrahigh spontaneous emission coupling factor (beta = 0.65) is presented. To distinguish the subtle lasing threshold features from possible material-related phenomena, such as saturable absorption in the gain medium, a series of active nanocavities with different values of beta have been designed to systematically approach the high-beta device. The demonstration of the lasing threshold is obtained through the observation of the transition from thermal to coherent light photon statistics that is well understood and identified in the beta << 1 lasing regime. The systematic investigation allows a more definitive validation of the onset of lasing in these active nanocavities.

Validation of Lasing in Active Nanocavities

Low-temperature (4.2–9K) transport along InAs-AlSb quantum wells with δ-doped barriers and superconducting niobium electrodes

We have investigated the design parameters for high-Q photonic-crystal (PC) bandgap modes in the emission wavelengths of InGaN/GaN multiple quantum wells. We demonstrate experimental schemes to realize 2D triangular-lattice PC membrane structures, which is essential to obtain photonic bandgap (PBG) modes, and the optical properties of L7 membrane nanocavities that consist of seven missing holes in the Γ-K direction. L7 cavities show pronounced resonances with Q factors of 300 to 800 in the PBG as well as the enhancement of light extraction of the broad InGaN/GaN multiple-quantum-well emission by the 2D PBG.

Optical properties of GaN Photonic Crystal Membrane Nanocavities at Blue Wavelengths

L7 photonic-crystal membrane nanocavities with Q factors of 600 have been realized based on the GaN/InGaN material system. Theoretically, a L7 nanocavity promises high Q factors as high as 5×104.

Optical properties of GaN Photonic Crystal Membrane Nanocavities

A simple, novel technique was devised to examine the effects of RIE self-bias voltage, plasma exposure time, and oxygen plasma clean conditions on the AlInAs Schottky contact layer of an InP-based HEMT. >

http://ieeexplore.ieee.org/iel2/1091/7763/00328189.pdf

Evelyn L. Hu

Papers

Validation of Lasing in Active Nanocavities

Low-temperature (4.2–9K) transport along InAs-AlSb quantum wells with δ-doped barriers and superconducting niobium electrodes

Optical properties of GaN Photonic Crystal Membrane Nanocavities at Blue Wavelengths

Optical properties of GaN Photonic Crystal Membrane Nanocavities

Conductance transient characterization of reactive ion etched HEMT gate recesses