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Evelyn L. Hu

Researcher at University of California, Santa Barbara

Publications -  290
Citations -  10338

Evelyn L. Hu is an academic researcher from University of California, Santa Barbara. The author has contributed to research in topics: Quantum well & Etching (microfabrication). The author has an hindex of 46, co-authored 286 publications receiving 10021 citations. Previous affiliations of Evelyn L. Hu include California NanoSystems Institute.

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Spin coherence and dephasing in GaN

TL;DR: In this article, a time-resolved Faraday rotation is used to measure electron spin coherence in n-type GaN epilayers and the dependence on both magnetic field and temperature is found to be qualitatively similar to previous studies in these systems.
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Fabrication and Characterization of Two-Dimensional Photonic Crystal Microcavities in Nanocrystalline Diamond

TL;DR: In this article, fabrication and optical characterization of high quality photonic crystal (PC) microcavities based on nanocrystalline diamond was reported. But the results of the characterization were limited to three-dimensional Finite Difference Difference Time Domain (FDTD) simulations.
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Room-temperature continuous-wave operation of 1.54-μm vertical-cavity lasers

TL;DR: In this article, the authors report on the room-temperature continuous-wave operation of vertical-cavity lasers operating at 1.54 /spl mu/m. The devices use a 7 strain-compensated quantum-well active layer sandwiched between two Al(Ga)As-GaAs quarter-wave mirrors joined by wafer fusion.
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Fabrication and characterization of two-dimensional photonic crystal microcavities in nanocrystalline diamond

TL;DR: In this article, the authors report fabrication and optical characterization of high quality photonic crystal microcavities based on nanocrystalline diamond, which offer exceptional opportunity to study cavity quantum electrodynamics at room temperature.
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Optical properties of InGaN quantum wells

TL;DR: In this paper, the emission mechanisms of strained InGaN quantum wells (QWs) were shown to vary depending on the well thickness L and InN molar fraction x, where Si-doping was found to improve the interface quality and surface morphology, resulting in an efficient carrier transfer from high to low bandgap energy portions of the well.