E
Evelyn L. Hu
Researcher at University of California, Santa Barbara
Publications - 290
Citations - 10338
Evelyn L. Hu is an academic researcher from University of California, Santa Barbara. The author has contributed to research in topics: Quantum well & Etching (microfabrication). The author has an hindex of 46, co-authored 286 publications receiving 10021 citations. Previous affiliations of Evelyn L. Hu include California NanoSystems Institute.
Papers
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Proceedings ArticleDOI
Photonic crystal quantum-dot laser with ultra-low threshold
Stefan Strauf,K. Hennessy,Matthew T. Rakher,Antonio Badolato,Pierre Petroff,Evelyn L. Hu,Dirk Bouwmeester +6 more
TL;DR: In this paper, a photonic crystal microcavities with embedded InAs/GaAs quantum dots as active material was fabricated and single mode lasing was found for devices emitting between 910-975 nm showing ultra-low lasing thresholds down to 160 nanoWatt.
Proceedings ArticleDOI
High temperature, optically pumped, 1.55 /spl mu/m VCSEL operating at 6 Gb/s
Adrian Keating,A. Black,A. Karim,Yi-Jen Chiu,P. Abraham,C. Harder,Evelyn L. Hu,John E. Bowers +7 more
TL;DR: In this article, a 980 nm laser was used to optically pump 1.55 /spl mu/m vertical cavity surface emitting lasers (VCSELs) and demonstrate record output power of 2 mW at 25/spl deg/C and a record operating temperature with 140 /splmu/W output power.
Journal ArticleDOI
Investigation of Sidewall Recombination in GaN Using a Quantum Well Probe
Elaine D. Haberer,M. Woods,A. R. Stonas,Ching-Hui Chen,Sarah L. Keller,M. Hansen,Umesh K. Mishra,Steven P. DenBaars,John E. Bowers,Evelyn L. Hu +9 more
TL;DR: In this paper, the authors used a quantum well (QW) probe structure to explore the size dependent effects of sidewall recombination in GaN and found that GaN is relatively insensitive to sidewall damage.
Journal ArticleDOI
Low threshold, electrically injected InGaAsP (1.3 /spl mu/m) vertical cavity lasers on GaAs substrates
J.J. Dudley,Dubravko Babic,Richard P. Mirin,Long Yang,Barry Miller,Rajeev J. Ram,T.E. Reynolds,Evelyn L. Hu,John E. Bowers +8 more
TL;DR: In this paper, an InGaAsP (1.3 mu m) active regions fused to GaAs-AlAs mirrors on GaAs substrates are demonstrated. And the use of the GaAsAlAs mirror makes the device more mechanically robust, improving the thermal conductivity and reducing problems with nonuniform injection.
Proceedings ArticleDOI
Transmission measurement of tapered single line defect photonic crystal waveguide
TL;DR: In this article, two-dimensional single-line defect Photonic Crystal (PC) waveguides were fabricated and characterized by optical transmission measurements, and different PC-waveguide tapers were investigated for coupling to access ridge waveguide.