E
Evelyn L. Hu
Researcher at University of California, Santa Barbara
Publications - 290
Citations - 10338
Evelyn L. Hu is an academic researcher from University of California, Santa Barbara. The author has contributed to research in topics: Quantum well & Etching (microfabrication). The author has an hindex of 46, co-authored 286 publications receiving 10021 citations. Previous affiliations of Evelyn L. Hu include California NanoSystems Institute.
Papers
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Proceedings ArticleDOI
External coupling of molecular dye emission to high-Q microdisk resonators
D.R. Rink,M.H. Bartl,M.H. Bartl,L. Zhang,G.D. Stucky,G.D. Stucky,G.D. Stucky,Evelyn L. Hu,Evelyn L. Hu +8 more
TL;DR: In this paper, the authors demonstrate the coupling of external emission from dye molecules to the cavity modes provided by a microdisk resonator utilizing a fast and simple fabrication method that combines semiconductor microprocessing with sol-gel supramolecular self-assembly chemistry.
Proceedings ArticleDOI
Monolithic integrated resonant tunneling diode and heterostructure junction field effect transistor logic circuits
TL;DR: The use of resonant tunneling diodes in combination with three-terminal gain devices, such as HBTs or FETs, has been successfully realized, and these RTDs exhibit strong potential for achieving higher integrated circuit densities and speed by exploiting the unique properties of RTDs as discussed by the authors.
Proceedings ArticleDOI
In-situ Processing Of GaAs/AiGaAs By Low Damage Selective Etching And Focussed Ion Beam Patterning
J. A. Skidmore,G.D. Spiers,J.H. English,Z. Xu,D. L. Green,D. B. Young,L.A. Coldren,Evelyn L. Hu,P.M. Petroff +8 more
TL;DR: Temkin et al. as mentioned in this paper used a microwave excited chlorine radical beam with a low voltage argon ion beam (RBIBE), which has been shown to provide smooth and highly chemically enhanced etching of GaAs.
Journal ArticleDOI
Limitations to the Bandgap-Selective Photoelectrochemical Etching of GaAs/AlxGa1−x as Heterostructures
TL;DR: In this paper, the authors used the wet photoelectrochemical (PEC) etch process to demonstrate the selective removal of low aluminum (Al) mole-fraction Al x Ga 1−x As layers from those with higher Al mole fraction.
Journal ArticleDOI
Influence of Low Temperature-Grown GaAs on Lateral Thermal Oxidation of Al0.98Ga0.02As
TL;DR: In this article, the lateral thermal oxidation process of Al0.98Ga0.02As layers has been studied by transmission electron microscopy and the effect of the addition of a Si02 cap layer is discussed.