scispace - formally typeset
E

Evelyn L. Hu

Researcher at University of California, Santa Barbara

Publications -  290
Citations -  10338

Evelyn L. Hu is an academic researcher from University of California, Santa Barbara. The author has contributed to research in topics: Quantum well & Etching (microfabrication). The author has an hindex of 46, co-authored 286 publications receiving 10021 citations. Previous affiliations of Evelyn L. Hu include California NanoSystems Institute.

Papers
More filters
Journal ArticleDOI

Microcavity InGaN light emitting diodes with a single Fabry‐Pérot mode

TL;DR: In this paper, a simple asymmetric cavity structure bounded by a highly reflective mirror at the bottom and air at the top is presented, where a single Fabry-Perot mode alters the emission pattern, so that a larger fraction of the generated light can be coupled to the light extraction cone.
Proceedings ArticleDOI

120/spl deg/C pulsed operation from a 1.55 /spl mu/m vertical-cavity laser

TL;DR: In this article, the design of InP-InGaAsP MQW vertical cavity lasers to achieve high temperature operation was discussed and it was concluded that the key to such design is the reduction of round trip cavity loss.
Proceedings ArticleDOI

Perspectives on the application of InP-based photonic crystal waveguides for optical signal processing

TL;DR: In this paper, the results from an investigation on slow and dispersive propagation in two different types of InP-based photonic crystal waveguides fabricated at UCSB were presented.
Journal ArticleDOI

Hydrogen ion treatments of oxidized GaAs(100) and AlGaAs(100) surfaces: surface stoichiometry and electronic properties

TL;DR: In this article, the variation of surface stoichiometry due to hydrogen ion treatments appears to be similar for both oxidized AlGaAs and GaAs surfaces, as examined by Auger electron spectroscopy.
Proceedings ArticleDOI

High-temperature 1.55-um vertical-cavity lasers through wafer fusion

TL;DR: In this paper, a 15 micrometer vertical cavity laser with two fused Al(Ga)As/GaAs mirrors with a strain-compensated InGaAsP/InP active region was used for current confinement.