F
Fauziyah Salehuddin
Researcher at Universiti Teknikal Malaysia Melaka
Publications - 94
Citations - 375
Fauziyah Salehuddin is an academic researcher from Universiti Teknikal Malaysia Melaka. The author has contributed to research in topics: Threshold voltage & MOSFET. The author has an hindex of 9, co-authored 91 publications receiving 332 citations. Previous affiliations of Fauziyah Salehuddin include Universiti Tenaga Nasional & National University of Malaysia.
Papers
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Journal Article
The Evolution of Non-invasive Blood Glucose Monitoring System for Personal Application
TL;DR: The optical and transdermal approach are the two most potential sensing modalities for non-invasive glucose monitoring that show a very good prospect.
Journal ArticleDOI
Design and optimization of 22 nm gate length high-k/metal gate NMOS transistor
Afifah Maheran A.H,Menon P S,Ibrahim Ahmad,Sahbudin Shaari,H. A. Elgomati,Fauziyah Salehuddin +5 more
TL;DR: In this article, a 22 nm gate length NMOS device using a combination of high-k material and metal as the gate was numerically developed using an industrial-based simulator.
Journal Article
Design and optimization of 22nm NMOS transistor
A. H. Afifah Maheran,P. Susthitha Menon N V Visvanathan,Ibrahim Ahmad,Sahbudin Shaari,H. A. Elgomati,Burhanuddin Yeop Majlis,Fauziyah Salehuddin +6 more
Journal Article
Application of Taguchi Method in the Optimization of Process Variation for 32nm CMOS Technology.
H. A. Elgomati,Burhanuddin Yeop Majlis,Ibrahim Ahmad,Fauziyah Salehuddin,Fauziyah Salehuddin,Fazrena Azlee Hamid,Azami Zaharim,Prakash R. Apte +7 more
TL;DR: In this paper, the effect of four process parameters namely HALO implantation, compensation implantations, SiO2 thickness and silicide annealing time on threshold voltage (VTH) in complementary metal oxide semiconductor (CMOS) technology is investigated.
Journal ArticleDOI
Impact of Different Dose and Angle in HALO Structure for 45nm NMOS Device
Fauziyah Salehuddin,Fauziyah Salehuddin,Ibrahim Ahmad,Ibrahim Ahmad,Fazrena Azlee Hamid,Fazrena Azlee Hamid,A. Zaharim,A. Zaharim +7 more
TL;DR: In this paper, the authors investigated the different dose and tilt HALO implant step in order to characterize the 45nm NMOS device and determined the settings of process parameters by using Taguchi experimental design method.