THE DESIGN AND ANALYSIS OF EXPERIMENTS. By Oscar Kempthorne. New York, John Wiley and Sons, Inc., 1952. 631 pp. $8.50. This book by a teacher of statistics (as well as a consultant for \"experimenters\") is a comprehensive study of the philosophical background for the statistical design of experiment. It is necessary to have some facility with algebraic notation and manipulation to be able to use the volume intelligently. The problems are presented from the theoretical point of view, without such practical examples as would be helpful for those not acquainted with mathematics. The mathematical justification for the techniques is given. As a somewhat advanced treatment of the design and analysis of experiments, this volume will be interesting and helpful for many who approach statistics theoretically as well as practically. With emphasis on the \"why,\" and with description given broadly, the author relates the subject matter to the general theory of statistics and to the general problem of experimental inference. MARGARET J. ROBERTSON

The Design and Analysis of Experiments

International Technology Roadmap for Semiconductors 2003の要求清浄度について － シリコンウエハ表面と雰囲気環境に要求される清浄度, 分析方法の現状について －

Worldwide, the number of people affected by diabetes is rapidly increasing due to aging populations and sedentary lifestyles, with the prospect of exceeding 500 million cases in 2030, resulting in one of the most challenging socio-health emergencies of the third millennium. Daily management of diabetes by patients relies on the capability of correctly measuring glucose concentration levels in the blood by using suitable sensors. In recent years, glucose monitoring has been revolutionized by the development of Continuous Glucose Monitoring (CGM) sensors, wearable non/minimally-invasive devices that measure glucose concentration by exploiting different physical principles, e.g., glucose-oxidase, fluorescence, or skin dielectric properties, and provide real-time measurements every 1–5 min. CGM opened new challenges in different disciplines, e.g., medicine, physics, electronics, chemistry, ergonomics, data/signal processing, and software development to mention but a few. This paper first makes an overview of wearable CGM sensor technologies, covering both commercial devices and research prototypes. Then, the role of CGM in the actual evolution of decision support systems for diabetes therapy is discussed. Finally, the paper presents new possible horizons for wearable CGM sensor applications and perspectives in terms of big data analytics for personalized and proactive medicine.

https://www.mdpi.com/2079-9292/6/3/65/pdf

Wearable Continuous Glucose Monitoring Sensors: A Revolution in Diabetes Treatment

Glucose monitoring devices represent an exciting frontier in diabetes research. Great efforts have been dedicated to the development of non-invasive glucose monitoring devices, which may considerably improve the quality of life for people suffering from diabetes and facilitate their compliance for glucose monitoring. This manuscript reviews past, current and emerging non-invasive glucose monitoring techniques and devices and presents the major challenges they face. Poor glucose specificity and sensitivity, physiological time lag, calibration process and human factors perspective are discussed. Since incorporating user requirements into device development may potentially increase user acceptance and improve patient safety and device effectiveness, special attention is given to usability, user experience and applicability for home use, thus extending previous published reviews.

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Non-Invasive Glucose Monitoring: A Review of Challenges and Recent Advances

Wearable healthcare: Lessons from the past and a peek into the future

Glucose monitoring technology has been used by diabetic patients to monitor their blood glucose level for the past three decades. This technology is very useful for managing diet among diabetic patients. This paper reviews the fundamental technique of blood glucose detection method and the development of blood glucose monitoring systems that have been developed ever since. The most common and widely used technique is an invasive technique that requires users to prick their finger to draw the blood. However, recently a lot of new technologies have been developed for non-invasive technique to monitor blood glucose monitoring and studies in this area are growing rapidly. Among all, the optical and transdermal approach are the two most potential sensing modalities for non-invasive glucose monitoring that show a very good prospect.

The Evolution of Non-invasive Blood Glucose Monitoring System for Personal Application

In this paper, we invented the optimization experiment design of a 22 nm gate length NMOS device which uses a combination of high-k material and metal as the gate which was numerically developed using an industrial-based simulator. The high-k material is Titanium dioxide (TiO2), while the metal gate is Tungsten Silicide (WSix). The design is optimized using the L9 Taguchi method to get the optimum parameter design. There are four process parameters and two noise parameters which were varied for analyzing the effect on the threshold voltage (Vth). The objective of this experiment is to minimize the variance of Vth where Taguchi's nominal-the-best signal-to-noise ratio (S/N Ratio) was used. The best settings of the process parameters were determined using Analysis of Mean (ANOM) and analysis of variance (ANOVA) to reduce the variability of Vth. The results show that the Vth values have least variance and the mean value can be adjusted to 0.306V ±0.027 for the NMOS device which is in line with projections by the ITRS specifications.

http://iopscience.iop.org/article/10.1088/1742-6596/431/1/012026/pdf

Design and optimization of 22 nm gate length high-k/metal gate NMOS transistor

Design and optimization of 22nm NMOS transistor

In this paper, we investigate the effect of four process parameters namely HALO implantation, compensation implantations, SiO2 thickness and silicide annealing time on threshold voltage (VTH) in complementary metal oxide semiconductor (CMOS) technology. The setting of process parameters were determined by Taguchi method in experimental design. The influence of the main process parameters on threshold voltage were determined using analysis of variance (ANOVA). The fabrication processes of the transistor were performed by a simulator namely ATHENA. The electrical characterization of the device was done by the a simulator of ATLAS. These two simulators were combined with Taguchi method to aid in design and optimizing process parameters. The other two parameter used in this experiments were Source/Drain (S/D) implantation dose and, silicide annealing temperature Threshold voltage (Vth) results were used as the evaluation parameters. The results show that the VTH value of 0.10308V and -0.10319V for NMOS and PMOS respectively. As conclusion, by utilizing Taguchi Method shown that process parameters can adjust threshold voltage (V TH ) to a stable value of 0.103V that is well within ITRS prediction for 32nm transistor

Application of Taguchi Method in the Optimization of Process Variation for 32nm CMOS Technology.

In this paper, we investigates the different dose and tilt HALO implant step in order to characterize the 45nm NMOS device. Besides HALO, the other two process parameters are oxide growth temperature and source/drain (S/D) implant dose. The settings of process parameters were determined by using Taguchi experimental design method. This work was done using TCAD simulator, consisting of a process simulator, ATHENA and device simulator, ATLAS. These two simulators were combined with Taguchi method to aid in design and optimizer the process parameters. Threshold voltage (VTH) results were used as the evaluation variable. The results were then subjected to the Taguchi method to determine the optimal process parameters and to produce predicted values. In this research, oxide growth temperature was the major factor affecting the threshold voltage (69%), whereas halo implant tilt was the second ranking factor (20%). The percent effect on Signal-to-Noice (S/N) ratio of halo implant dose and S/D implant dose are 6% and 5% respectively. As conclusions, oxide growth temperature and halo implant tilt were identified as the process parameters that have strongest effect on the response characteristics. While S/D implant dose was identified as an adjustment factor to get threshold voltage for NMOS device closer to the nominal value (0.150V) at tox= 1.1nm.

Fauziyah Salehuddin

Papers

The Evolution of Non-invasive Blood Glucose Monitoring System for Personal Application

Design and optimization of 22 nm gate length high-k/metal gate NMOS transistor

Design and optimization of 22nm NMOS transistor

Application of Taguchi Method in the Optimization of Process Variation for 32nm CMOS Technology.

Impact of Different Dose and Angle in HALO Structure for 45nm NMOS Device