F
Fei Xue
Researcher at King Abdullah University of Science and Technology
Publications - 30
Citations - 2008
Fei Xue is an academic researcher from King Abdullah University of Science and Technology. The author has contributed to research in topics: Piezoelectricity & Neuromorphic engineering. The author has an hindex of 17, co-authored 26 publications receiving 1259 citations. Previous affiliations of Fei Xue include Chinese Academy of Sciences & Center for Excellence in Education.
Papers
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Journal ArticleDOI
Two-dimensional materials with piezoelectric and ferroelectric functionalities
TL;DR: In this paper, the preparation of functional 2D layered materials, including exfoliation methods and vapor phase deposition growth, is reviewed, followed by a general introduction to various piezo/ferro-electric characterization methods.
Journal ArticleDOI
Room-Temperature Ferroelectricity in Hexagonally Layered α-In2Se3 Nanoflakes down to the Monolayer Limit
Fei Xue,Weijin Hu,Ko-Chun Lee,Li Syuan Lu,Junwei Zhang,Hao Ling Tang,Ali Han,Wei Ting Hsu,Shao Bo Tu,Wen-Hao Chang,Chenhsin Lien,Jr-Hau He,Zhidong Zhang,Lain-Jong Li,Lain-Jong Li,Xixiang Zhang +15 more
TL;DR: In this article, a hexagonally stacking α-In2Se3 nanoflake, a rarely studied van der Waals polymorph, is reported to exhibit out-ofplane (OOP) and in-plane (IP) ferroelectricity at room temperature.
Journal ArticleDOI
Multidirection Piezoelectricity in Mono- and Multilayered Hexagonal α-In2Se3.
Fei Xue,Fei Xue,Junwei Zhang,Weijin Hu,Wei Ting Hsu,Ali Han,Siu-Fung Leung,Jing Kai Huang,Yi Wan,Shuhai Liu,Junli Zhang,Jr-Hau He,Wen-Hao Chang,Zhong Lin Wang,Zhong Lin Wang,Xixiang Zhang,Lain-Jong Li,Lain-Jong Li +17 more
TL;DR: The coexistence of out-of-plane and in-plane piezoelectricity in monolayer to bulk α-In2Se3 is experimentally reported, attributed to their noncentrosymmetry originating from the hexagonal stacking.
Journal ArticleDOI
p-Type MoS2 and n-Type ZnO Diode and Its Performance Enhancement by the Piezophototronic Effect
Fei Xue,Libo Chen,Jian Chen,Jingbin Liu,Longfei Wang,Mengxiao Chen,Yaokun Pang,Xiaonian Yang,Guoyun Gao,Junyi Zhai,Zhong Lin Wang,Zhong Lin Wang +11 more
TL;DR: A plasma-induced p-type MoS2 flake and n-type ZnO film diode, which exhibits an excellent rectification ratio, is demonstrated, and the photocurrent can be enhanced by a factor of four through the piezophototronic effect.
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Multilayered electret films based triboelectric nanogenerator
TL;DR: In this paper, a novel electret film based TENG (E-TENG) fabricated by corona charging is proposed that greatly enhances the effective surface charge density of the thin films as compared to those subjected to contact electrification.