Journal ArticleDOI
Recent progress in resistive random access memories: Materials, switching mechanisms, and performance
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TLDR
A comprehensive review of the recent progress in the so-called resistive random access memories (RRAMs) can be found in this article, where a brief introduction is presented to describe the construction and development of RRAMs, their potential for broad applications in the fields of nonvolatile memory, unconventional computing and logic devices, and the focus of research concerning RRAMS over the past decade.Abstract:
This review article attempts to provide a comprehensive review of the recent progress in the so-called resistive random access memories (RRAMs) First, a brief introduction is presented to describe the construction and development of RRAMs, their potential for broad applications in the fields of nonvolatile memory, unconventional computing and logic devices, and the focus of research concerning RRAMs over the past decade Second, both inorganic and organic materials used in RRAMs are summarized, and their respective advantages and shortcomings are discussed Third, the important switching mechanisms are discussed in depth and are classified into ion migration, charge trapping/de-trapping, thermochemical reaction, exclusive mechanisms in inorganics, and exclusive mechanisms in organics Fourth, attention is given to the application of RRAMs for data storage, including their current performance, methods for performance enhancement, sneak-path issue and possible solutions, and demonstrations of 2-D and 3-D crossbar arrays Fifth, prospective applications of RRAMs in unconventional computing, as well as logic devices and multi-functionalization of RRAMs, are comprehensively summarized and thoroughly discussed The present review article ends with a short discussion concerning the challenges and future prospects of the RRAMsread more
Citations
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Zinc Oxide Nanostructures for NO2 Gas–Sensor Applications: A Review
TL;DR: Various factors such as NO2 concentrations, annealing temperature, ZnO morphologies and particle sizes, relative humidity, operating temperatures which are affecting the NO2 gas sensing properties are discussed in this review.
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Designing crystallization in phase-change materials for universal memory and neuro-inspired computing
TL;DR: This Review focuses on the crystallization mechanisms of PCMs as well as the design principles to achieve PCMs with high switching speeds and good data retention, which will aid the development of PCM-based universal memory and neuro-inspired devices.
Journal ArticleDOI
Conduction Mechanism of Valence Change Resistive Switching Memory: A Survey
Ee Wah Lim,Razali Ismail +1 more
TL;DR: In this article, the authors conduct a survey on several published valence change resistive switching memories with a particular interest in the I-V characteristic and the corresponding conduction mechanism.
Journal ArticleDOI
Resistive Switching Behavior in Organic-Inorganic Hybrid CH3 NH3 PbI3-x Clx Perovskite for Resistive Random Access Memory Devices.
TL;DR: The simply designed Au/CH3 NH3 PbI3- x Clx /FTO structure is fabricated by a low-temperature, solution-processable method, which exhibits remarkable bipolar resistive switching and nonvolatile properties.
Journal ArticleDOI
Flexible Hybrid Organic–Inorganic Perovskite Memory
Chungwan Gu,Jang-Sik Lee +1 more
TL;DR: Flexible nonvolatile memory based on the perovskite layer shows reproducible and reliable memory characteristics in terms of program/erase operations, data retention, and endurance properties.
References
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The missing memristor found
TL;DR: It is shown, using a simple analytical example, that memristance arises naturally in nanoscale systems in which solid-state electronic and ionic transport are coupled under an external bias voltage.
Book
Lange's Handbook of Chemistry
TL;DR: This encyclopedic work includes authoritative coverage of atomic and molecular structure, organic chemistry (revised), inorganic, analytical, and electro- chemistry, mathematics as applied to chemistry, and more.
Journal ArticleDOI
Nanoionics-based resistive switching memories
TL;DR: A coarse-grained classification into primarily thermal, electrical or ion-migration-induced switching mechanisms into metal-insulator-metal systems, and a brief look into molecular switching systems is taken.