Graphene is a rapidly rising star on the horizon of materials science and condensed-matter physics. This strictly two-dimensional material exhibits exceptionally high crystal and electronic quality, and, despite its short history, has already revealed a cornucopia of new physics and potential applications, which are briefly discussed here. Whereas one can be certain of the realness of applications only when commercial products appear, graphene no longer requires any further proof of its importance in terms of fundamental physics. Owing to its unusual electronic spectrum, graphene has led to the emergence of a new paradigm of 'relativistic' condensed-matter physics, where quantum relativistic phenomena, some of which are unobservable in high-energy physics, can now be mimicked and tested in table-top experiments. More generally, graphene represents a conceptually new class of materials that are only one atom thick, and, on this basis, offers new inroads into low-dimensional physics that has never ceased to surprise and continues to provide a fertile ground for applications.

The rise of graphene

This article reviews the basic theoretical aspects of graphene, a one-atom-thick allotrope of carbon, with unusual two-dimensional Dirac-like electronic excitations. The Dirac electrons can be controlled by application of external electric and magnetic fields, or by altering sample geometry and/or topology. The Dirac electrons behave in unusual ways in tunneling, confinement, and the integer quantum Hall effect. The electronic properties of graphene stacks are discussed and vary with stacking order and number of layers. Edge (surface) states in graphene depend on the edge termination (zigzag or armchair) and affect the physical properties of nanoribbons. Different types of disorder modify the Dirac equation leading to unusual spectroscopic and transport properties. The effects of electron-electron and electron-phonon interactions in single layer and multilayer graphene are also presented.

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The electronic properties of graphene

When electrons are confined in two-dimensional materials, quantum-mechanically enhanced transport phenomena such as the quantum Hall effect can be observed. Graphene, consisting of an isolated single atomic layer of graphite, is an ideal realization of such a two-dimensional system. However, its behaviour is expected to differ markedly from the well-studied case of quantum wells in conventional semiconductor interfaces. This difference arises from the unique electronic properties of graphene, which exhibits electron–hole degeneracy and vanishing carrier mass near the point of charge neutrality1,2. Indeed, a distinctive half-integer quantum Hall effect has been predicted3,4,5 theoretically, as has the existence of a non-zero Berry's phase (a geometric quantum phase) of the electron wavefunction—a consequence of the exceptional topology of the graphene band structure6,7. Recent advances in micromechanical extraction and fabrication techniques for graphite structures8,9,10,11,12 now permit such exotic two-dimensional electron systems to be probed experimentally. Here we report an experimental investigation of magneto-transport in a high-mobility single layer of graphene. Adjusting the chemical potential with the use of the electric field effect, we observe an unusual half-integer quantum Hall effect for both electron and hole carriers in graphene. The relevance of Berry's phase to these experiments is confirmed by magneto-oscillations. In addition to their purely scientific interest, these unusual quantum transport phenomena may lead to new applications in carbon-based electronic and magneto-electronic devices.

https://arxiv.org/pdf/cond-mat/0509355.pdf

Experimental observation of the quantum Hall effect and Berry's phase in graphene

Topological insulators are new states of quantum matter which cannot be adiabatically connected to conventional insulators and semiconductors. They are characterized by a full insulating gap in the bulk and gapless edge or surface states which are protected by time-reversal symmetry. These topological materials have been theoretically predicted and experimentally observed in a variety of systems, including HgTe quantum wells, BiSb alloys, and Bi2Te3 and Bi2Se3 crystals. Theoretical models, materials properties, and experimental results on two-dimensional and three-dimensional topological insulators are reviewed, and both the topological band theory and the topological field theory are discussed. Topological superconductors have a full pairing gap in the bulk and gapless surface states consisting of Majorana fermions. The theory of topological superconductors is reviewed, in close analogy to the theory of topological insulators.

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Topological insulators and superconductors

When electrons are confined in two-dimensional materials, quantum-mechanically enhanced transport phenomena such as the quantum Hall effect can be observed. Graphene, consisting of an isolated single atomic layer of graphite, is an ideal realization of such a two-dimensional system. However, its behaviour is expected to differ markedly from the well-studied case of quantum wells in conventional semiconductor interfaces. This difference arises from the unique electronic properties of graphene, which exhibits electron–hole degeneracy and vanishing carrier mass near the point of charge neutrality. Indeed, a distinctive half-integer quantum Hall effect has been predicted theoretically, as has the existence of a non-zero Berry's phase (a geometric quantum phase) of the electron wavefunction—a consequence of the exceptional topology of the graphene band structure. Recent advances in micromechanical extraction and fabrication techniques for graphite structures now permit such exotic two-dimensional electron systems to be probed experimentally. Here we report an experimental investigation of magneto-transport in a high-mobility single layer of graphene. Adjusting the chemical potential with the use of the electric field effect, we observe an unusual half-integer quantum Hall effect for both electron and hole carriers in graphene. The relevance of Berry's phase to these experiments is confirmed by magneto-oscillations. In addition to their purely scientific interest, these unusual quantum transport phenomena may lead to new applications in carbon-based electronic and magneto-electronic devices.

/pdf/experimental-observation-of-quantum-hall-effect-and-berry-s-1x72b687wt.pdf

Experimental Observation of Quantum Hall Effect and Berry's Phase in Graphene

The exact and complete set of highest-weight eigenstates of the finite-size SU(n) Heisenberg chain with inverse-square exchange (ISE) are constructed using the occupation-number representation of the ``strings,'' which can be considered as the unbroken resonating-valence bonds. The string description, which is believed to be exact only in the thermodynamic limit for the Bethe ansatz solvable models, becomes exact for any size ISE model due to the squeezing effect of the strings in the ISE limit. This feature provides a basis for the realization of the Yangian symmetry in the ISE model.

Squeezed strings and Yangian symmetry of the Heisenberg chain with long-range interaction.

“Solidification” in a soluble model of bosons on a one-dimensional lattice: The “Boson-Hubbard chain”

In a magnetic field, a wave function in a two-dimensional system is uniquely specified by the position of its nodes. We show that for high fields and a weak random potential, motion of the zeros of the wave function under smooth changes of the boundary conditions can be used to characterize the behavior of the one-electron states and distinguish between localized and extended states.

Localization, wave-function topology, and the integer quantized Hall effect

We study the $\ensuremath{\nu}=1/3$ quantum Hall state in the presence of random disorder. We calculate the topologically invariant Chern number, which is the only quantity known at present to distinguish unambiguously between insulating and current carrying states in an interacting system. The mobility gap can be determined numerically this way and is found to agree with experimental value semiquantitatively. As the disorder strength increases towards a critical value, both the mobility gap and plateau width narrow continuously and ultimately collapse, leading to an insulating phase.

https://arxiv.org/pdf/cond-mat/0302533.pdf

Disorder-driven collapse of the mobility gap and transition to an insulator in the fractional quantum Hall effect.

It has recently been pointed out that phases of matter with intrinsic topological order, like the fractional quantum Hall states, have an extra dynamical degree of freedom that corresponds to quantum geometry. Here we perform extensive numerical studies of the geometric degree of freedom for the simplest example of fractional quantumHall states—the filling v = 1/3 Laughlin state.We perturb the system by a smooth, spatially dependent metric deformation and measure the response of the Hall fluid, finding it to be proportional to the Gaussian curvature of the metric. Further, we generalize the concept of coherent states to formulate the bulk off-diagonal long range order for the Laughlin state, and compute the deformations of the metric in the vicinity of the edge of the system. We introduce a ‘pair amplitude’ operator and show that it can be used to numerically determine the intrinsic metric of the Laughlin state. Furthermore, these various probes are applied to several experimentally relevant settings that can expose the quantum geometry of the Laughlin state, in particular to systems with mass anisotropy and in the presence of an electric field gradient.

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Frederick D. Haldane

Papers

Squeezed strings and Yangian symmetry of the Heisenberg chain with long-range interaction.

“Solidification” in a soluble model of bosons on a one-dimensional lattice: The “Boson-Hubbard chain”

Localization, wave-function topology, and the integer quantized Hall effect

Disorder-driven collapse of the mobility gap and transition to an insulator in the fractional quantum Hall effect.

Probing the geometry of the Laughlin state