G
G. Jaschke
Researcher at Infineon Technologies
Publications - 4
Citations - 137
G. Jaschke is an academic researcher from Infineon Technologies. The author has contributed to research in topics: Quantum well & Photoluminescence. The author has an hindex of 3, co-authored 4 publications receiving 137 citations.
Papers
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Journal ArticleDOI
Low threshold InGaAsN/GaAs lasers beyond 1500 nm
TL;DR: In this paper, a threshold current density of 690 A/cm 2 was achieved for an emission wavelength of 1400nm with 1200μm long devices. But no indications for 3D growth are detected and carrier localization is below 25meV.
Journal ArticleDOI
Influence of structural nonuniformity and nonradiative processes on the luminescence efficiency of InGaAsN quantum wells
Lutz Geelhaar,M. Galluppi,G. Jaschke,Robert Averbeck,Henning Riechert,T. Remmele,Martin Albrecht,M. Dworzak,R. Hildebrant,Axel Hoffmann +9 more
TL;DR: In this paper, the luminescence efficiency of InGaAsN quantum wells was analyzed under a variety of conditions, including structural nonuniformity and nonradiative decay time.
Journal ArticleDOI
Annealing of InGaAsN quantum wells in hydrogen
TL;DR: In this article, quantum wells grown by molecular beam epitaxy at different temperatures were annealed under a comprehensive variety of conditions either in Ar or in H2, and a significantly higher luminescence efficiency (i.e., room temperature photoluminescence intensity) was obtained for annealing in H 2.
Proceedings ArticleDOI
Record-low thresholds of InGaAsN/GaAs SQWs lasers
TL;DR: In this paper, the authors present a systematic study on realising low-threshold, long-wavelength lasers based on simplemost InGaAsN/GaAs SWQ structures grown on GaAs by plasma-assisted MBE.