T
T. Remmele
Researcher at Institut für Kristallzüchtung
Publications - 43
Citations - 1474
T. Remmele is an academic researcher from Institut für Kristallzüchtung. The author has contributed to research in topics: Quantum well & Molecular beam epitaxy. The author has an hindex of 18, co-authored 38 publications receiving 1362 citations.
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Journal ArticleDOI
Systematic experimental and theoretical investigation of intersubband absorption in Ga N ∕ Al N quantum wells
Maria Tchernycheva,Laurent Nevou,L. Doyennette,François H. Julien,E. Warde,Fabien Guillot,Eva Monroy,Edith Bellet-Amalric,T. Remmele,Martin Albrecht +9 more
TL;DR: In this paper, the authors studied the electronic confinement in hexagonal (1.33 -1.91)-1.5-1.3-μm hexagonal quantum well by means of high-resolution x-ray diffraction and transmission electron microscopy.
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GaN/AlN short-period superlattices for intersubband optoelectronics: A systematic study of their epitaxial growth, design, and performance
P. K. Kandaswamy,Fabien Guillot,Edith Bellet-Amalric,Eva Monroy,Laurent Nevou,Maria Tchernycheva,Adrien Michon,François H. Julien,Esther Baumann,Fabrizio R. Giorgetta,Daniel Hofstetter,T. Remmele,Martin Albrecht,Stefan Birner,Le Si Dang +14 more
TL;DR: In this article, the effect of growth and design parameters on the performance of Si-doped GaN/AlN multiquantum-well (MQW) structures for inter-band optoelectronics in the near infrared was studied.
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Epitaxial stabilization of pseudomorphic α-Ga2O3on sapphire (0001)
Robert Schewski,Günter Wagner,M. Baldini,Daniela Gogova,Zbigniew Galazka,Tobias Schulz,T. Remmele,Toni Markurt,Holger von Wenckstern,Marius Grundmann,Oliver Bierwagen,Patrick Vogt,Martin Albrecht +12 more
TL;DR: In this paper, a three-monolayer-thick pseudomorphically grown layer of trigonal α-Ga2O3 at the interface between the c-plane sapphire substrate and the β-Ga 2O3 independent of the growth method is investigated.
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Effect of annealing on the In and N distribution in InGaAsN quantum wells
Martin Albrecht,Vincenzo Grillo,T. Remmele,Horst P. Strunk,A. Yu. Egorov,Gh. Dumitras,Henning Riechert,A. Kaschner,R. Heitz,Axel Hoffmann +9 more
TL;DR: In this article, the influence of annealing on compositional fluctuations in InGaAsN quantum wells by means of composition-sensitive high-resolution transmission electron microscopy and photoluminescence was analyzed.
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Si-doped GaN /AlN quantum dot superlattices for optoelectronics at telecommunication wavelengths
Fabien Guillot,Edith Bellet-Amalric,Eva Monroy,Maria Tchernycheva,Laurent Nevou,L. Doyennette,F. H. Julien,Le Si Dang,T. Remmele,Martin Albrecht,Tomohiko Shibata,Mitsuhiro Tanaka +11 more
TL;DR: In this article, the authors report on the controlled growth by molecular beam epitaxy of 20-period Si-doped GaN∕AlN quantum dot (QD) superlattices, in order to tailor their intraband absorption within the 1.3-1.55μm telecommunication spectral range.