G
G. Kerrien
Researcher at STMicroelectronics
Publications - 13
Citations - 50
G. Kerrien is an academic researcher from STMicroelectronics. The author has contributed to research in topics: Optical proximity correction & Process window. The author has an hindex of 4, co-authored 13 publications receiving 49 citations.
Papers
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Proceedings ArticleDOI
3D mask modeling with oblique incidence and mask corner rounding effects for the 32nm node
Mazen Saied,Franck Foussadier,Jerome Belledent,Yorick Trouiller,Isabelle Schanen,Emek Yesilada,Christian Gardin,Jean Christophe Urbani,Frank Sundermann,Frederic Robert,Christophe Couderc,Florent Vautrin,Laurent LeCam,G. Kerrien,Jonathan Planchot,Catherine Martinelli,Bill Wilkinson,Yves Rody,Amandine Borjon,Nicolo Morgana,J. L. Di-Maria,Vincent Farys +21 more
TL;DR: In this paper, the effects of oblique incidence and corner rounding of mask features on resist contours of 2D structures (i.e. line-ends and corners) are studied.
Proceedings ArticleDOI
Tracking of design related defects hidden in the random defectivity in a production environment
TL;DR: In this paper, an automatic flow to track systematic defects within global defectivity is presented, which starts with a relevant selection of several inspection defect files for a given layer, then the tool performs a fine alignment of the whole multi inspection defect data set with design file.
Proceedings ArticleDOI
Three-dimensional mask effects and source polarization impact on OPC model accuracy and process window
Mazen Saied,F. Foussadier,Jerome Belledent,Yorick Trouiller,Isabelle Schanen,Christian Gardin,Jean-Christophe Urbani,Patrick Montgomery,Frank Sundermann,Frederic Robert,Christophe Couderc,Florent Vautrin,G. Kerrien,Jonathan Planchot,Emek Yesilada,Catherine Martinelli,Bill Wilkinson,Amandine Borjon,Laurent LeCam,J. L. Di-Maria,Yves Rody,N. Morgana,Vincent Farys +22 more
TL;DR: The effects of 3D mask topology on process window are studied using several 45 nm node mask structure types and the benefits of using an advanced model algorithm, that comprehends3D mask effects, will be discussed.
Proceedings ArticleDOI
Si-photonics waveguides manufacturability using advanced RET solutions
N. Zeggaoui,B. Orlando,G. Kerrien,Vincent Farys,Emek Yesilada,Sebastien Cremer,Alexander Tritchkov,Vlad Liubich +7 more
TL;DR: Two different Optical Proximity Correction (OPC) flows for Si-Photonics patterning are presented and it is observed that ILT flow gives the best Edge Placement Error (EPE) and the lowest ripples along the devices.
Proceedings ArticleDOI
Study of SRAF placement for contact at 45 nm and 32 nm node
Vincent Farys,Frederic Robert,Catherine Martinelli,Yorick Trouiller,Frank Sundermann,C. Gardin,Jonathan Planchot,G. Kerrien,Florent Vautrin,Mazen Saied,Emek Yesilada,F. Foussadier,Alexandre Villaret,L. Perraud,B. Vandewalle,J. C. Le Denmat,Mame Kouna Top +16 more
TL;DR: This article proposes to study the placement of scatter-trenches assist features for the contact layer using process window simulation with different SRAF sizes and distance to the main OPC to establish the trends for size and placement.