R
Reinhart Job
Researcher at Münster University of Applied Sciences
Publications - 152
Citations - 1460
Reinhart Job is an academic researcher from Münster University of Applied Sciences. The author has contributed to research in topics: Silicon & Hydrogen. The author has an hindex of 19, co-authored 152 publications receiving 1411 citations. Previous affiliations of Reinhart Job include Rolf C. Hagen Group & FernUniversität Hagen.
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The microstructure of the fibrous layer of terebratulide brachiopod shell calcite
TL;DR: In this article, the authors investigated the ultrastructure of the secondary layer of the calcite shell of the terebratulide brachiopod Megerlia truncata with SEM and electron beam backscattering diffraction.
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Thermochemical polishing of CVD diamond films
Alexander M. Zaitsev,G. Kosaca,B. Richarz,V. Raiko,Reinhart Job,T. Fries,Wolfgang R. Fahrner +6 more
TL;DR: In this article, a set-up for thermochemical polishing of CVD diamond films on a hot vibrating steel plate has been developed, which resulted in a light patterning corresponding to the polycrystalline structure of the polished surfaces.
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Sensors and smart electronics in harsh environment applications
TL;DR: In this paper, the limits of sensors in harsh environments are discussed and failures of sensor materials, interconnects, and cables are shown, where remote measurements can be solutions to overcome material problems.
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The Relationship between Resistivity and Boron Doping Concentration of Single and Polycrystalline Diamond
Matthew Werner,Reinhart Job,A. Zaitzev,W. R. Fahrner,W. Seifert,Colin Johnston,Paul R. Chalker +6 more
TL;DR: In this paper, a fair agreement between the depth distribution of the boron concentration determined from spreading resistance and secondary ion mass spectroscopy is found, with the aid of these curves the doping and hole concentrations can be estimated from room temperature resistivity measurements.
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Thickness Dependence of Resistivity and Optical Reflectance of ITO Films
TL;DR: In this paper, the thickness dependences of structure, resistance and optical reflectance of indium-tin-oxide (ITO) films are characterized and the results show that when the film thickness is less than 40 nm, the resistivity and optical reflection changes remarkably with thickness, and the optoelectrical properties trend to stabilize when the thickness is over 55 nm.