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W. R. Fahrner
Researcher at FernUniversität Hagen
Publications - 97
Citations - 1222
W. R. Fahrner is an academic researcher from FernUniversität Hagen. The author has contributed to research in topics: Silicon & Diamond. The author has an hindex of 19, co-authored 97 publications receiving 1175 citations.
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Journal ArticleDOI
High energy ion beam irradiation of polymers for electronic applications
Dietmar Fink,Prashant S. Alegaonkar,Alexander Petrov,M. Wilhelm,P. Szimkowiak,Moni Behar,Dipak Sinha,W. R. Fahrner,K. Hoppe,Lewis T. Chadderton +9 more
TL;DR: In this article, a number of new ideas are presented how to proceed further in this field and how to combine with lithography enables one to form different types of novel transistors, microcapacitors, -magnets, -transformers and -sensors.
Journal ArticleDOI
Etched ion tracks in silicon oxide and silicon oxynitride as charge injection or extraction channels for novel electronic structures
Dietmar Fink,Alexander Petrov,K. Hoppe,W. R. Fahrner,Ricardo Meurer Papaléo,Alexander S. Berdinsky,Amita Chandra,A. Chemseddine,A. Zrineh,A. Biswas,Franz Faupel,Lewis T. Chadderton +11 more
TL;DR: TEMPOS as mentioned in this paper is a family of tunable electronic material with pores in oxide on silicon structures, which can be used as charge extraction or injection paths towards the conducting channel in the underlying silicon.
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Dark I–V–T measurements and characteristics of (n) a-Si/(p) c-Si heterojunction solar cells
TL;DR: In this paper, the dark IV-curves were investigated in order to contribute to a better understanding of the basis of solar cells by using a simple (Al/(p) c-Si/(n) a-Si:H/ITO/metal grid) structure.
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Sensors and smart electronics in harsh environment applications
TL;DR: In this paper, the limits of sensors in harsh environments are discussed and failures of sensor materials, interconnects, and cables are shown, where remote measurements can be solutions to overcome material problems.
Journal ArticleDOI
The Relationship between Resistivity and Boron Doping Concentration of Single and Polycrystalline Diamond
Matthew Werner,Reinhart Job,A. Zaitzev,W. R. Fahrner,W. Seifert,Colin Johnston,Paul R. Chalker +6 more
TL;DR: In this paper, a fair agreement between the depth distribution of the boron concentration determined from spreading resistance and secondary ion mass spectroscopy is found, with the aid of these curves the doping and hole concentrations can be estimated from room temperature resistivity measurements.